IRLSZ24A - параметры транзистора MOSFET, его аналоги, datasheet

IRLSZ24A Datasheet (PDF)

..1. Size:218K samsung
irlsz24a.pdf pdf_icon

IRLSZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 14 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.061 (Typ.)1231.Gate 2. Drain 3. SourceAbsolut

9.1. Size:219K samsung
irlsz34a.pdf pdf_icon

IRLSZ34AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 20 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.033 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute

9.2. Size:215K samsung
irlsz14a.pdf pdf_icon

IRLSZ14AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 (Typ.)1231.Gate 2. Drain 3. SourceAbsolut

9.3. Size:221K samsung
irlsz44a.pdf pdf_icon

IRLSZ44AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.02 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute M

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .