IRLSZ24A - аналоги, параметры транзистора - Справочник транзисторов

IRLSZ24A даташит

..1. Size:218K samsung
irlsz24a.pdf pdf_icon

IRLSZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 14 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.061 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut

9.1. Size:219K samsung
irlsz34a.pdf pdf_icon

IRLSZ34A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 20 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.033 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute

9.2. Size:215K samsung
irlsz14a.pdf pdf_icon

IRLSZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.122 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut

9.3. Size:221K samsung
irlsz44a.pdf pdf_icon

IRLSZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.02 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute M

Другие MOSFET... IRLS520A , IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A , IRLSZ14A , IRF1405 , IRLSZ34A , IRLSZ44A , IRLU010 , IRLU014 , IRLU014A , IRLU020 , IRLU024 , IRLU024A .