AFN4936S datasheet, подбор замены

 ..1. Size:464K  alfa-mos
 afn4936s.pdf 

AFN4936S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4936S, N-Channel enhancement mode 30V/5.0A,RDS(ON)=24m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.7A,RDS(ON)=38m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.1. Size:464K  alfa-mos
 afn4936ws.pdf 

AFN4936WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4936WS, N-Channel enhancement mode 30V/5.0A,RDS(ON)=24m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.7A,RDS(ON)=38m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:576K  alfa-mos
 afn4924.pdf 

AFN4924 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 38m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:602K  alfa-mos
 afn4946w.pdf 

AFN4946W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=48m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 9.3. Size:574K  alfa-mos
 afn4996.pdf 

AFN4996 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/6.8A,RDS(ON)=75m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.4. Size:575K  alfa-mos
 afn4997.pdf 

AFN4997 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/5.6A,RDS(ON)=75m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.5. Size:583K  alfa-mos
 afn4998w.pdf 

AFN4998W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=130m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

 9.6. Size:498K  alfa-mos
 afn4900w.pdf 

AFN4900W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4900W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=115m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=140m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.7. Size:576K  alfa-mos
 afn4924w.pdf 

AFN4924W Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4924W, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 28m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.8. Size:583K  alfa-mos
 afn4922w.pdf 

AFN4922W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.5A,RDS(ON)=300m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

 9.9. Size:280K  alfa-mos
 afn4906.pdf 

AFN4906 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4906, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/5.6A,RDS(ON)=70m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.10. Size:600K  alfa-mos
 afn4946.pdf 

AFN4946 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.11. Size:582K  alfa-mos
 afn4998.pdf 

AFN4998 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.12. Size:601K  alfa-mos
 afn4946bw.pdf 

AFN4946BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=65m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited