AFN4998 - параметры транзистора MOSFET, его аналоги, datasheet

AFN4998 Datasheet (PDF)

..1. Size:582K alfa-mos
afn4998.pdf pdf_icon

AFN4998 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

0.1. Size:583K alfa-mos
afn4998w.pdf pdf_icon

AFN4998W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

8.1. Size:574K alfa-mos
afn4996.pdf pdf_icon

AFN4996 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/6.8A,RDS(ON)=75m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

8.2. Size:575K alfa-mos
afn4997.pdf pdf_icon

AFN4997 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/5.6A,RDS(ON)=75m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

Другие MOSFET... AFN4924W , AFN4936S , AFN4936WS , AFN4946 , AFN4946BW , AFN4946W , AFN4996 , AFN4997 , IRFB4227 , AFN4998W , AFN5004S , AFN501DEA , AFN5800 , AFN5800W , AFN5808W , AFN5904W , AFN5908W .