AFN7412 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFN7412
Маркировка: 12*
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.35 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 0.8 V
Максимально допустимый постоянный ток стока |Id|: 3.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8.2 nC
Время нарастания (tr): 16 ns
Выходная емкость (Cd): 120 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.052 Ohm
Тип корпуса: SOT-323
AFN7412 Datasheet (PDF)
afn7412.pdf
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AFN7412 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7412, N-Channel enhancement mode 20V/3.8A,RDS(ON)=52m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=56m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=68m@VGS=1.8V These devices are particularly suited for low Supe
afn7420.pdf
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AFN7420 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7420, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn7402.pdf
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AFN7402 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7402, N-Channel enhancement mode 20V/3.6A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=90m@VGS=1.8V These devices are particularly suited for low Supe
afn7424s.pdf
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AFN7424S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo
afn7472s.pdf
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AFN7472S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=14m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn7400.pdf
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AFN7400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7400, N-Channel enhancement mode 30V/3.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=102m@VGS=2.5V These devices are particularly suited for low Supe
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![AFN7412](https://alltransistors.com/images/us.png)
![AFN7412](https://alltransistors.com/images/es.png)
![AFN7412](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C