AFP2341 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFP2341
Маркировка: 41*
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 0.8 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8 nC
Время нарастания (tr): 1 ns
Выходная емкость (Cd): 115 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: SOT-23
AFP2341 Datasheet (PDF)
afp2341.pdf
AFP2341 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=55m@VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=68m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=85m@VGS=-1.8V These devices are particularly suited for l
afp2343a.pdf
AFP2343A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2343A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=70m@VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=92m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=180m@VGS=-1.8V These devices are particularly suited fo
afp2337a.pdf
AFP2337A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2337A, P-Channel enhancement mode 30V/1.2A,RDS(ON)=890m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/0.6A,RDS(ON)=1450m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afp2307a.pdf
AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par
afp2367s.pdf
AFP2367S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=80m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m@VGS=-1.8V These devices are particularly suited for
afp2303a.pdf
AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp2319as.pdf
AFP2319AS Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=120m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp2367as.pdf
AFP2367AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.5A,RDS(ON)=98m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m@VGS=-1.8V These devices are particularly suited f
afp2323.pdf
AFP2323 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp2301s.pdf
AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp2317.pdf
AFP2317 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
afp2309.pdf
AFP2309 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.4A,RDS(ON)=320m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
afp2311.pdf
AFP2311 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low
afp2379.pdf
AFP2379 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2379, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=135m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=150m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
afp2319a.pdf
AFP2319A Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=130m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp2301.pdf
AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su
afp2303.pdf
AFP2303 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=130m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=170m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp2309a.pdf
AFP2309A Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.6A,RDS(ON)=320m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp2311a.pdf
AFP2311A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=75m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for lo
afp2323a.pdf
AFP2323A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=240m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp2301as.pdf
AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl
afp2301a.pdf
AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp2333a.pdf
AFP2333A Alfa-MOS 25V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2333A, P-Channel enhancement mode -25V/-2.8A,RDS(ON)=145m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -25V/-2.4A,RDS(ON)=180m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp2307as23.pdf
AFP2307AS23www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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