AFP3459 datasheet, подбор замены

 ..1. Size:579K  alfa-mos
 afp3459.pdf 

AFP3459 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-3.6A,RDS(ON)=138m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 9.1. Size:481K  alfa-mos
 afp3411.pdf 

AFP3411 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.5A,RDS(ON)=46m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:531K  alfa-mos
 afp3497.pdf 

AFP3497 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3497, P-Channel enhancement mode -20V/-3.8A,RDS(ON)=100m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=140m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m @VGS=-1.8V These devices are particularly suited for

 9.3. Size:520K  alfa-mos
 afp3413.pdf 

AFP3413 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=95m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=125m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=205m @VGS=-1.8V These devices are particularly suited for

 9.4. Size:462K  alfa-mos
 afp3405.pdf 

AFP3405 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=50m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 9.5. Size:651K  alfa-mos
 afp3413a.pdf 

AFP3413A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=230m @VGS=-1.8V These devices are particularly suited f

 9.6. Size:756K  alfa-mos
 afp3485.pdf 

AFP3485 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3485, P-Channel enhancement mode -30V/ -12A,RDS(ON)=28m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -10A,RDS(ON)=37m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 9.7. Size:662K  alfa-mos
 afp3407as.pdf 

AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

 9.8. Size:644K  alfa-mos
 afp3481s.pdf 

AFP3481S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3481S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=62m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=90m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.9. Size:766K  alfa-mos
 afp3401as.pdf 

AFP3401AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70 @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-1.8 RDS(ON)=80 @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105 @VGS=-2.5V These devices are particularly suited for lo

 9.10. Size:557K  alfa-mos
 afp3415.pdf 

AFP3415 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.4A,RDS(ON)=58m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=85m @VGS=1.8V These devices are particularly suited for low

 9.11. Size:565K  alfa-mos
 afp3403.pdf 

AFP3403 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=125m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=155m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=220m @VGS=-2.5V These devices are particularly suited fo

 9.12. Size:697K  alfa-mos
 afp3403a.pdf 

AFP3403A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403A, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=130m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.2A,RDS(ON)=160m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=270m @VGS=-2.5V These devices are particularly suited fo

 9.13. Size:530K  alfa-mos
 afp3407s.pdf 

AFP3407S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=95m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.14. Size:634K  alfa-mos
 afp3401s.pdf 

AFP3401S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401S, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=65m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=80m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A,RDS(ON)=105m @VGS=-2.5V These devices are particularly suited fo

 9.15. Size:501K  alfa-mos
 afp3425.pdf 

AFP3425 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3425, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m @VGS=1.8V These devices are particularly suited for low