AFP6405WS - параметры транзистора MOSFET, его аналоги, datasheet

AFP6405WS Datasheet (PDF)

..1. Size:541K alfa-mos
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AFP6405WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6405WS, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=56m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.0A,RDS(ON)=86m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

7.1. Size:541K alfa-mos
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AFP6405S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6405S, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=72m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.0A,RDS(ON)=92m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

9.1. Size:590K alfa-mos
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AFP6459 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6459, P-Channel enhancement mode -60V/-5.4A,RDS(ON)=102m@VGS=10V MOSFET, uses Advanced Trench Technology -60V/-4.0A,RDS(ON)=115m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .