IRLU2703 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLU2703
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 45 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 1(min) V
Максимально допустимый постоянный ток стока |Id|: 23 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 15(max) nC
Время нарастания (tr): 140 ns
Выходная емкость (Cd): 210 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.045 Ohm
Тип корпуса: TO251
IRLU2703 Datasheet (PDF)
irlu2703pbf irlr2703pbf.pdf
PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te
irlr2703 irlu2703.pdf
PD- 95083AIRLR/U2703PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-Resistance DVDSS = 30Vl Surface Mount (IRLR2703)l Straight Lead (IRLU2703)l Advanced Process TechnologyRDS(on) = 0.045Gl Fast Switchingl Fully Avalanche RatedID = 23ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing te
irlu2703.pdf
isc N-Channel MOSFET Transistor IRLU2703FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu2705pbf irlr2705pbf.pdf
PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp
irlr2705pbf irlu2705pbf.pdf
PD - 95062AIRLR2705PbFIRLU2705PbFl Logic-Level Gate DriveHEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRLR2705)VDSS = 55Vl Straight Lead (IRLU2705)l Advanced Process Technologyl Fast Switching RDS(on) = 0.040Gl Fully Avalanche Ratedl Lead-FreeID = 28ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedp
irlu2705.pdf
isc N-Channel MOSFET Transistor IRLU2705FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
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