ALD1101BPAL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ALD1101BPAL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 10 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.04 A
Tjⓘ - Максимальная температура канала: 70 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 75 Ohm
Тип корпуса: DIP-8
- подбор MOSFET транзистора по параметрам
ALD1101BPAL Datasheet (PDF)
ald1101.pdf

ADVANCEDLINEAR ALD1101A/ALD1101BDEVICES, INC.ALD1101DUAL N-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1101 is a monolithic dual N-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-
ald1103.pdf

ADVANCEDLINEARDEVICES, INC.ALD1103DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1103 is a monolithic dual N-channel and dual P-channel matched Precision current mirrorstransistor pair intended for a broad range of analog applications. These Complementary push-pull linear drivesenhancement-mode transistors are manufactured wit
ald110808-series.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110808/ALD110808A/ALD110908/ALD110908AQUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.80VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/ Precision current mirrorsdual enhancement mode N-Channel MOSFETs matched at the factory Precision current sour
ald110814 ald110914.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110814/ALD110914QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +1.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110814/ALD110914 are monolithic quad/dual enhancement mode N- Precision current mirrorsChannel MOSFETs matched at the factory using ALDs proven EPAD Precision current sourcesCMOS technol
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SVT085R5NT | NCEP026N10F | QM6006S | SI7913DN | JCS5N50CT | MC11N005 | NVMFS5C628N
History: SVT085R5NT | NCEP026N10F | QM6006S | SI7913DN | JCS5N50CT | MC11N005 | NVMFS5C628N



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