IRLU3303 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLU3303
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 68 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 1(min) V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 26(max) nC
Время нарастания (tr): 200 ns
Выходная емкость (Cd): 340 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.031 Ohm
Тип корпуса: TO251
IRLU3303 Datasheet (PDF)
irlu3303pbf irlr3303pbf.pdf
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PD- 95086AIRLR/U3303PbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Ultra Low On-ResistanceVDSS = 30Vl Surface Mount (IRLR3303)l Straight Lead (IRLU3303)RDS(on) = 0.031l Advanced Process TechnologyGl Fast Switchingl Fully Avalanche RatedID = 35ASl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing t
irlu3303.pdf
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isc N-Channel MOSFET Transistor IRLU3303FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3103pbf irlr3103pbf.pdf
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PD - 95085AIRLR/U3103PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR3103)VDSS = 30Vl Straight Lead (IRLU3103)l Advanced Process TechnologyRDS(on) = 0.019l Fast SwitchingGl Fully Avalanche RatedID = 55Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irlr3715zcpbf irlu3715zcpbf.pdf
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PD - 96053IRLR3715ZCPbFIRLU3715ZCPbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Ultra-Low Gate Impedancel Fully Characterized Avalanche VoltageD-Pa
irlr3714 irlu3714.pdf
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PD - 94266IRLR3714SMPS MOSFETIRLU3714HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltag
irlr3105pbf irlu3105pbf.pdf
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PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie
irlu3715pbf irlr3715pbf.pdf
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PD - 95555ASMPS MOSFETIRLR3715PbFIRLU3715PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 14m 54A for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGS D-Pak I-Pak
irlu3714pbf irlr3714pbf.pdf
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PD - 95554AIRLR3714PbFSMPS MOSFETIRLU3714PbFHEXFET Power MOSFETApplicationsl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSD-Pak I-Pak
irlr3802pbf irlu3802pbf.pdf
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PD - 95089AIRLR3802PbFIRLU3802PbFHEXFET Power MOSFETApplicationsl High Frequency 3.3V and 5V input Point-VDSS RDS(on) max Qgof-Load Synchronous Buck Converters12V 8.5m 27nCl Power Management for Netcom,Computing and Portable Applications.l Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on)l Fully Characterized Avalanche Voltageand Current D-Pak I-
irlu3114zpbf irlr3114zpbf.pdf
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PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance
irlu3717pbf irlr3717pbf.pdf
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PD - 95776AIRLR3717PbFIRLU3717PbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl
irlr3705zpbf irlu3705zpbf.pdf
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PD - 95956AIRLR3705ZPbFIRLU3705ZPbFFeatures Logic Level Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremel
irlu3636pbf irlr3636pbf.pdf
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PD - 96224IRLR3636PbFIRLU3636PbFApplicationsl DC Motor DriveHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS 60Vl High Speed Power SwitchingRDS(on) typ.5.4ml Hard Switched and High Frequency Circuits max. 6.8mGID (Silicon Limited)99ABenefitsID (Package Limited)50ASl Optimized for Logic Level
irlu3110zpbf irlr3110zpbf.pdf
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PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to
irlu3715zpbf irlr3715zpbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 95088AIRLR3715ZPbFIRLU3715ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power20V 11m 7.2nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsD-Pak I-Pakl Ultra-Low Gate ImpedanceIRLR3715Z IRLU3715Zl Fully Cha
irlu3410pbf irlr3410pbf.pdf
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PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec
irlr3915pbf irlu3915pbf.pdf
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PD - 95090BIRLR3915PbFIRLU3915PbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 14m Lead-FreeGDescriptionID = 30ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista
irlu3714zpbf irlr3714zpbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 95775AIRLR3714ZPbFIRLU3714ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power 20V 15m 4.7nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl
irlr3715 irlu3715.pdf
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PD - 94177SMPS MOSFETIRLR3715IRLU3715HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 14m 54A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage
irlr3636pbf irlu3636pbf.pdf
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PD - 96224IRLR3636PbFIRLU3636PbFApplicationsl DC Motor DriveHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS 60Vl High Speed Power SwitchingRDS(on) typ.5.4ml Hard Switched and High Frequency Circuits max. 6.8mGID (Silicon Limited)99ABenefitsID (Package Limited)50ASl Optimized for Logic Level
irlr3717pbf irlu3717pbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 95776AIRLR3717PbFIRLU3717PbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl
irlr3105pbf irlu3105pbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 95553BIRLR3105PbFIRLU3105PbFHEXFET Power MOSFETFeatures Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating Temperature Fast Switching RDS(on) = 0.037G Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 25ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achie
irlr3103pbf irlu3103pbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 95085AIRLR/U3103PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Ultra Low On-ResistanceDl Surface Mount (IRLR3103)VDSS = 30Vl Straight Lead (IRLU3103)l Advanced Process TechnologyRDS(on) = 0.019l Fast SwitchingGl Fully Avalanche RatedID = 55Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing
irlr3410pbf irlu3410pbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec
irlr3110zpbf irlu3110zpbf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 97175BIRLR3110ZPbFIRLU3110ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 100V Repetitive Avalanche Allowed up to TjmaxGRDS(on) = 14mDescriptionSpecifically designed for Industrial applications,this HEXFET Power MOSFET utilizes the latest Sprocessing techniques to
auirlr3110z auirlu3110z.pdf
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AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea
irlr3114zpbf irlu3114zpbf.pdf
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PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance
irlr3705zpbf irlu3705zpbf.pdf
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PD - 95956AIRLR3705ZPbFIRLU3705ZPbFFeatures Logic Level Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 8.0mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremel
auirlr3114z auirlu3114z.pdf
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AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L
irlr3915pbf irlu3915pbf.pdf
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PD - 95090BIRLR3915PbFIRLU3915PbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 14m Lead-FreeGDescriptionID = 30ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista
irlu3103p.pdf
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IRLU3103Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A) TrenchFET Gen III Power MOSFET0.07 at VGS = 10 V 53 100 % Rg TestedRoHS30 19 nCCOMPLIANT 100 % UIS Tested0.09 at VGS = 4.5 V 48APPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D STo
irlu3410p.pdf
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IRLU3410Pwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
irlu3717.pdf
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isc N-Channel MOSFET Transistor IRLU3717FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3705z.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor IRLU3705ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irlu3915.pdf
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isc N-Channel MOSFET Transistor IRLU3915FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3636.pdf
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isc N-Channel MOSFET Transistor IRLU3636FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3802.pdf
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isc N-Channel MOSFET Transistor IRLU3802FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3110z.pdf
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isc N-Channel MOSFET Transistor IRLU3110ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irlu3105.pdf
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isc N-Channel MOSFET Transistor IRLU3105FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3410.pdf
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isc N-Channel MOSFET Transistor IRLU3410FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
irlu3114z.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor IRLU3114ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irlu3715z.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor IRLU3715ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
irlu3103.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor IRLU3103FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .