Справочник MOSFET. IRFB23N20DPBF

 

IRFB23N20DPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB23N20DPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB23N20DPBF

 

 

IRFB23N20DPBF Datasheet (PDF)

 ..1. Size:279K  international rectifier
 irfb23n20dpbf irfs23n20dpbf.pdf

IRFB23N20DPBF IRFB23N20DPBF

PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc

 ..2. Size:275K  infineon
 irfb23n20dpbf irfs23n20dpbf irfsl23n20dpbf.pdf

IRFB23N20DPBF IRFB23N20DPBF

PD - 95536IRFB23N20DPbF IRFS23N20DPbFSMPS MOSFET IRFSL23N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.10 24Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanc

 4.1. Size:196K  international rectifier
 irfb23n20d.pdf

IRFB23N20DPBF IRFB23N20DPBF

PD- 93904AIRFB23N20D IRFS23N20DSMPS MOSFET IRFSL23N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.10 24ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT

 7.1. Size:142K  international rectifier
 irfs23n15d irfb23n15d irfsl23n15d.pdf

IRFB23N20DPBF IRFB23N20DPBF

PD - 93894AIRFB23N15D IRFS23N15DSMPS MOSFET IRFSL23N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262 Fully Characterized Avalan

 7.2. Size:278K  international rectifier
 irfb23n15dpbf irfsl23n15dpbf.pdf

IRFB23N20DPBF IRFB23N20DPBF

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

 7.3. Size:278K  infineon
 irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf

IRFB23N20DPBF IRFB23N20DPBF

PD - 95535IRFB23N15DPbF IRFS23N15DPbFSMPS MOSFET IRFSL23N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters 150V 0.090 23Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262l F

 7.4. Size:844K  cn vbsemi
 irfb23n15d.pdf

IRFB23N20DPBF IRFB23N20DPBF

IRFB23N15Dwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise no

 7.5. Size:227K  inchange semiconductor
 irfb23n15d.pdf

IRFB23N20DPBF IRFB23N20DPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB23N15DIIRFB23N15DFEATURESStatic drain-source on-resistance:RDS(on) 90mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)a

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