Справочник MOSFET. IRFB3307PBF

 

IRFB3307PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB3307PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 120 nC
   trⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 460 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0063 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB3307PBF

 

 

IRFB3307PBF Datasheet (PDF)

 ..1. Size:140K  international rectifier
 irfb3307pbf.pdf

IRFB3307PBF IRFB3307PBF

PD - 95706CIRFB3307PbFIRFS3307PbFIRFSL3307PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS75Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.5.0ml Hard Switched and High Frequency CircuitsG max. 6.3mID120ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterize

 6.1. Size:243K  international rectifier
 irfb3307zgpbf.pdf

IRFB3307PBF IRFB3307PBF

PD - 96212AIRFB3307ZGPbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.l Hard Switched and High Frequency Circuits 4.6m max. 5.8mGID (Silicon Limited)128ABenefitsSID (Package Limited)120Al Improved Gate, Avalanche and Dynamicdv/dt Rugg

 6.2. Size:316K  international rectifier
 irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf

IRFB3307PBF IRFB3307PBF

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

 6.3. Size:316K  infineon
 irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf

IRFB3307PBF IRFB3307PBF

PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

 6.4. Size:246K  inchange semiconductor
 irfb3307z.pdf

IRFB3307PBF IRFB3307PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307ZFEATURESStatic drain-source on-resistance:RDS(on) 5.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

 6.5. Size:245K  inchange semiconductor
 irfb3307.pdf

IRFB3307PBF IRFB3307PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3307 IIRFB3307FEATURESStatic drain-source on-resistance:RDS(on) 6.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

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