IRLW510A - описание и поиск аналогов

IRLW/I510A FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 C Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 1 2 3 3 1. Gate 2. Drai

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area o C 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.101 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.058 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area o C 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.046 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Ab