Справочник MOSFET. IRFB4310GPBF

 

IRFB4310GPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB4310GPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 170 nC
   trⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 540 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRFB4310GPBF

 

 

IRFB4310GPBF Datasheet (PDF)

 ..1. Size:285K  international rectifier
 irfb4310gpbf.pdf

IRFB4310GPBF IRFB4310GPBF

PD - 96190IRFB4310GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 6.1. Size:324K  international rectifier
 irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

IRFB4310GPBF IRFB4310GPBF

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

 6.2. Size:376K  international rectifier
 irfb4310pbf irfs4310pbf irfsl4310pbf.pdf

IRFB4310GPBF IRFB4310GPBF

PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 6.3. Size:291K  international rectifier
 irfb4310zgpbf.pdf

IRFB4310GPBF IRFB4310GPBF

PD - 96189IRFB4310ZGPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8ml Uninterruptible Power Supplyl High Speed Power Switching max. 6.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 127A ID (Package Limited) 120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggedn

 6.4. Size:324K  infineon
 irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

IRFB4310GPBF IRFB4310GPBF

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

 6.5. Size:376K  infineon
 irfb4310pbf irfs4310pbf irfsl4310pbf.pdf

IRFB4310GPBF IRFB4310GPBF

PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 6.6. Size:291K  infineon
 irfb4310zgpbf.pdf

IRFB4310GPBF IRFB4310GPBF

PD - 96189IRFB4310ZGPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8ml Uninterruptible Power Supplyl High Speed Power Switching max. 6.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 127A ID (Package Limited) 120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggedn

 6.7. Size:245K  inchange semiconductor
 irfb4310.pdf

IRFB4310GPBF IRFB4310GPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310 IIRFB4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

 6.8. Size:251K  inchange semiconductor
 irfb4310z.pdf

IRFB4310GPBF IRFB4310GPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310ZFEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

 6.9. Size:206K  inchange semiconductor
 irfb4310zpbf.pdf

IRFB4310GPBF IRFB4310GPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310ZPBFFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

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History: IXFT20N100P | SUU10P10-195 | SUD50P04-08

 

 
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