IRFB4510PBF datasheet, подбор замены

 ..1. Size:218K  international rectifier
 irfb4510pbf.pdf 

PD - 97772 IRFB4510PbF HEXFET Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 10.7m l Uninterruptible Power Supply l High Speed Power Switching G max. 13.5m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 62A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characte

 6.1. Size:244K  inchange semiconductor
 irfb4510.pdf 

isc N-Channel MOSFET Transistor IRFB4510 IIRFB4510 FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.1. Size:231K  international rectifier
 irfb4215pbf.pdf 

PD - 95757A IRFB4215PbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

 9.2. Size:285K  international rectifier
 irfb4310gpbf.pdf 

PD - 96190 IRFB4310GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

 9.3. Size:799K  international rectifier
 irfb4410pbf irfs4410pbf irfsl4410pbf.pdf 

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 9.4. Size:324K  international rectifier
 irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf 

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

 9.5. Size:283K  international rectifier
 irfb4321gpbf.pdf 

PD - 96215 IRFB4321GPbF Applications HEXFET Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m ID 83A Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D D Performance l Improved Diode Recovery

 9.6. Size:278K  international rectifier
 auirfb4410.pdf 

PD - 97598 AUTOMOTIVE GRADE AUIRFB4410 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 100V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 8.0m 175 C Operating Temperature max. 10m Fast Switching G Repetitive Avalanche Allowed up to ID (Silicon Limited) 88A Tjmax Lead-Free, RoHS Compliant ID (Package Limited)

 9.7. Size:376K  international rectifier
 irfb4310pbf irfs4310pbf irfsl4310pbf.pdf 

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 9.8. Size:215K  international rectifier
 irfb42n20d.pdf 

PD- 94208 SMPS MOSFET IRFB42N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.055 44A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Vo

 9.9. Size:281K  international rectifier
 irfb4019pbf.pdf 

 9.10. Size:392K  international rectifier
 irfb4137pbf.pdf 

IRFB4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D VDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 9.11. Size:291K  international rectifier
 irfb4310zgpbf.pdf 

PD - 96189 IRFB4310ZGPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn

 9.12. Size:312K  international rectifier
 irfb4115gpbf.pdf 

PD - 96216 IRFB4115GPbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize

 9.13. Size:330K  international rectifier
 irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf 

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l

 9.14. Size:336K  international rectifier
 irfb4115pbf.pdf 

IRFB4115PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacita

 9.15. Size:337K  international rectifier
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf.pdf 

PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID Benefits 150V 0.045 41A l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avala

 9.16. Size:284K  international rectifier
 irfb4227pbf.pdf 

PD - 97035D IRFB4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications TJ max 17

 9.17. Size:245K  international rectifier
 irfb4710.pdf 

PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014 75A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262

 9.18. Size:292K  international rectifier
 irfb4229pbf.pdf 

PD - 97078A IRFB4229PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP Sustain, VDS min 250 V Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C and Pass Switch Applications 91 A l Low QG f

 9.19. Size:291K  international rectifier
 irfb4127pbf.pdf 

PD -97136A IRFB4127PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 17m l High Speed Power Switching G max. 20m l Hard Switched and High Frequency Circuits ID 76A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avala

 9.20. Size:169K  international rectifier
 irfb42n20dpbf.pdf 

PD- 95470 SMPS MOSFET IRFB42N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.055 44A l Motor Control l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Char

 9.21. Size:277K  international rectifier
 irfb4321pbf.pdf 

PD - 97103B IRFB4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m Benefits ID 85A l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance D D l Improved Diode Re

 9.22. Size:293K  international rectifier
 irfb4212pbf.pdf 

PD - 96918A DIGITAL AUDIO MOSFET IRFB4212PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 100 V amplifier applications m RDS(ON) typ. @ 10V 72.5 Low RDSON for improved efficiency Qg typ. 15 nC Low QG and QSW for better THD and improved Qsw typ. 8.3 nC efficiency RG(int) typ. 2.2 Low QRR for better THD and lower EMI TJ max 175 C

 9.23. Size:802K  international rectifier
 irfb4410.pdf 

PD - 96902C IRFB4410 IRFS4410 IRFSL4410 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m Benefits ID 96A l Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness l Fully Characterized Capacita

 9.24. Size:283K  international rectifier
 irfb4233pbf.pdf 

PD - 97004A IRFB4233PbF PDP SWITCH Features Key Parameters l Advanced process technology VDS min 230 V l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 276 V l Low EPULSE rating to reduce power dissipation m RDS(ON) typ. @ 10V 31 in PDP Sustain, Energy Recovery and Pass IRP max @ TC= 100 C 114 A Switch Applications

 9.25. Size:641K  international rectifier
 irfb4020pbf.pdf 

PD - 97195 DIGITAL AUDIO MOSFET IRFB4020PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 200 V amplifier applications RDS(ON) typ. @ 10V m 80 Low RDSON for improved efficiency Qg typ. 18 nC Qsw typ. 6.7 nC Low QG and QSW for better THD and improved RG(int) typ. 3.2 efficiency TJ max 175 C Low QRR for better THD and lower EM

 9.26. Size:294K  international rectifier
 irfb4615pbf.pdf 

PD -96171 IRFB4615PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 32m l High Speed Power Switching G max. 39m l Hard Switched and High Frequency Circuits ID 35A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

 9.27. Size:310K  international rectifier
 irfb4332pbf.pdf 

PD - 97099 IRFB4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 120 A and Pass Switch Applications

 9.28. Size:201K  international rectifier
 irfb4215.pdf 

PD - 95884 IRFB4215 HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techn

 9.29. Size:288K  international rectifier
 irfb4620pbf.pdf 

PD -96172 IRFB4620PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 60m l Uninterruptible Power Supply l High Speed Power Switching G max. 72.5m l Hard Switched and High Frequency Circuits ID 25A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

 9.30. Size:663K  international rectifier
 irfb4710pbf irfs4710pbf irfsl4710pbf.pdf 

PD- 95146 IRFB4710PbF IRFS4710PbF IRFSL4710PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014 75A Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-2

 9.31. Size:399K  international rectifier
 irfb4610pbf irfs4610pbf irfsl4610pbf.pdf 

PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 9.32. Size:303K  international rectifier
 irfb4110gpbf.pdf 

PD - 96214 IRFB4110GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

 9.33. Size:341K  international rectifier
 irfb4110pbf.pdf 

IRFB4110PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.7m l High Speed Power Switching max. 4.5m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 180A S ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness

 9.34. Size:381K  international rectifier
 irfb4610 irfs4610 irfsl4610.pdf 

PD - 96906B IRFB4610 IRFS4610 IRFSL4610 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m Benefits l Improved Gate, Avalanche and Dynamic dV/dt ID 73A S Ruggedness l Fully Characterized Capacita

 9.35. Size:294K  international rectifier
 irfb4410zgpbf.pdf 

PD - 96213 IRFB4410ZGPbF HEXFET Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized C

 9.36. Size:292K  international rectifier
 irfb4228pbf.pdf 

PD - 97227A IRFB4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications RDS(ON) typ. @ 10V m l Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 170 A and Pass Switch Application

 9.37. Size:306K  international rectifier
 irfb4110qpbf.pdf 

PD - 96138 IRFB4110QPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits l Lead-Free max 4.5m ID 180A Benefits l Improved Gate, Avalanche and Dynamic dv/dt D Ruggedness D l Fully Characterized Capacitance an

 9.38. Size:802K  international rectifier
 irfb4410 irfs4410 irfsl4410.pdf 

PD - 96902C IRFB4410 IRFS4410 IRFSL4410 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m Benefits ID 96A l Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness l Fully Characterized Capacita

 9.39. Size:708K  infineon
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf 

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri

 9.40. Size:717K  infineon
 auirfb4610 auirfs4610.pdf 

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 9.41. Size:809K  cn evvo
 irfb4110.pdf 

IRFB4110 100 V N-Channel MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA D l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l

 9.42. Size:1046K  cn minos
 irfb4110.pdf 

100V N-Channel Power MOSFET DESCRIPTION The IRFB4110 uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 180A R

 9.43. Size:551K  cn minos
 irfb4227.pdf 

IRFB4227 Silicon N-Channel Power MOSFET Description The IRFB4227 uses advanced trench technology and design to provide Excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =200V,I =65A DS D R 20m @V =10V (Typ 20m ) dson GS R 25m @V =4.5V (Typ 25m ) dson GS Low ON Resistance Low Reverse transfer capacitances 100% Sin

 9.44. Size:245K  inchange semiconductor
 irfb4115g.pdf 

isc N-Channel MOSFET Transistor IRFB4115G IIRFB4115G FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU

 9.45. Size:245K  inchange semiconductor
 irfb4410zg.pdf 

isc N-Channel MOSFET Transistor IRFB4410ZG IIRFB4410ZG FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.46. Size:246K  inchange semiconductor
 irfb4610.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4610 IIRFB4610 FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 9.47. Size:245K  inchange semiconductor
 irfb4110.pdf 

isc N-Channel MOSFET Transistor IRFB4110 IIRFB4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.48. Size:245K  inchange semiconductor
 irfb42n20d.pdf 

isc N-Channel MOSFET Transistor IRFB42N20D IIRFB42N20D FEATURES Static drain-source on-resistance RDS(on) 55m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters Uninterruptible Power Supplies ABSOLUTE MAXIMUM RATINGS(T =2

 9.49. Size:245K  inchange semiconductor
 irfb4019.pdf 

isc N-Channel MOSFET Transistor IRFB4019 IIRFB4019 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATINGS

 9.50. Size:245K  inchange semiconductor
 irfb4228.pdf 

isc N-Channel MOSFET Transistor IRFB4228 IIRFB4228 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM

 9.51. Size:244K  inchange semiconductor
 irfb41n15d.pdf 

isc N-Channel MOSFET Transistor IRFB41N15D IIRFB41N15D FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.52. Size:245K  inchange semiconductor
 irfb4615.pdf 

isc N-Channel MOSFET Transistor IRFB4615 IIRFB4615 FEATURES Static drain-source on-resistance RDS(on) 39m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

 9.53. Size:245K  inchange semiconductor
 irfb4310.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310 IIRFB4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU

 9.54. Size:246K  inchange semiconductor
 irfb4137.pdf 

isc N-Channel MOSFET Transistor IRFB4137 IIRFB4137 FEATURES Static drain-source on-resistance RDS(on) 69m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

 9.55. Size:245K  inchange semiconductor
 irfb4127.pdf 

isc N-Channel MOSFET Transistor IRFB4127 IIRFB4127 FEATURES Static drain-source on-resistance RDS(on) 20m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

 9.56. Size:245K  inchange semiconductor
 irfb4620.pdf 

isc N-Channel MOSFET Transistor IRFB4620 IIRFB4620 FEATURES Static drain-source on-resistance RDS(on) 72.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU

 9.57. Size:245K  inchange semiconductor
 irfb4332.pdf 

isc N-Channel MOSFET Transistor IRFB4332 IIRFB4332 FEATURES Static drain-source on-resistance RDS(on) 33m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM

 9.58. Size:245K  inchange semiconductor
 irfb4710.pdf 

isc N-Channel MOSFET Transistor IRFB4710 IIRFB4710 FEATURES Static drain-source on-resistance RDS(on) 0.014 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.59. Size:251K  inchange semiconductor
 irfb4310z.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI

 9.60. Size:206K  inchange semiconductor
 irfb4321pbf.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4321PBF FEATURES With low gate drive requirements Improved diode recovery improves switching Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.61. Size:244K  inchange semiconductor
 irfb4227.pdf 

isc N-Channel MOSFET Transistor IRFB4227 IIRFB4227 FEATURES Static drain-source on-resistance RDS(on) 24m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM

 9.62. Size:246K  inchange semiconductor
 irfb4410.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4410 IIRFB4410 FEATURES Static drain-source on-resistance RDS(on) 10m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU

 9.63. Size:245K  inchange semiconductor
 irfb4321.pdf 

isc N-Channel MOSFET Transistor IRFB4321 IIRFB4321 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

 9.64. Size:251K  inchange semiconductor
 irfb4410z.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4410Z IIRFB4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM

 9.65. Size:245K  inchange semiconductor
 irfb4229.pdf 

isc N-Channel MOSFET Transistor IRFB4229 IIRFB4229 FEATURES Static drain-source on-resistance RDS(on) 46m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM

 9.66. Size:244K  inchange semiconductor
 irfb4212.pdf 

isc N-Channel MOSFET Transistor IRFB4212 IIRFB4212 FEATURES Static drain-source on-resistance RDS(on) 72.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.67. Size:245K  inchange semiconductor
 irfb4110g.pdf 

isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110G FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.68. Size:206K  inchange semiconductor
 irfb4310zpbf.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310ZPBF FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 9.69. Size:245K  inchange semiconductor
 irfb4115.pdf 

isc N-Channel MOSFET Transistor IRFB4115 IIRFB4115 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

 9.70. Size:245K  inchange semiconductor
 irfb4020.pdf 

isc N-Channel MOSFET Transistor IRFB4020 IIRFB4020 FEATURES Static drain-source on-resistance RDS(on) 100m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATING