Справочник MOSFET. IRLW620A

 

IRLW620A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLW620A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10.3 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IRLW620A

 

 

IRLW620A Datasheet (PDF)

 ..1. Size:204K  1
 irli620a irlw620a.pdf

IRLW620A IRLW620A

 ..2. Size:929K  samsung
 irlw620a.pdf

IRLW620A IRLW620A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute M

 9.1. Size:201K  1
 irli640a irlw640a.pdf

IRLW620A IRLW620A

 9.2. Size:234K  fairchild semi
 irlw610a irli610a.pdf

IRLW620A IRLW620A

IRLW/I610AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 1.185 (Typ.)112331. Gate 2. Drain

 9.3. Size:226K  fairchild semi
 irlw630a irli630a.pdf

IRLW620A IRLW620A

IRLW/I630AFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 150C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.335 (Typ.)112331. Gate 2. Drain 3

 9.4. Size:983K  samsung
 irlw640a.pdf

IRLW620A IRLW620A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut

 9.5. Size:1006K  samsung
 irlw630a.pdf

IRLW620A IRLW620A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute M

 9.6. Size:911K  samsung
 irlw610a.pdf

IRLW620A IRLW620A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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