AM20N20-125D - описание и поиск аналогов

 ..1. Size:81K  analog power
 am20n20-125d.pdf 

Analog Power AM20N20-125D N-Channel 200-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 260 @ VGS = 10V 12 converters and power management in portable and 200 300 @ VGS = 5.5V 11

 9.1. Size:86K  analog power
 am20n10-250de.pdf 

Analog Power AM20N10-250DE N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 280 @ VG = 10V 11 S converters and power management in portable and 100 355 @ VG = 4.5V

 9.2. Size:305K  analog power
 am20n10-350d.pdf 

Analog Power AM20N10-350D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 420 @ VGS = 10V 9.0 Low thermal impedance 100 460 @ VGS = 5.5V 8.6 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.3. Size:287K  analog power
 am20n10-115d.pdf 

Analog Power AM20N10-115D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 115 @ VGS = 10V 17 Low thermal impedance 100 135 @ VGS = 4.5V 16 Fast switching speed Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

 9.4. Size:323K  analog power
 am20n15-250b.pdf 

Analog Power AM20N15-250B N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 200 @ VGS = 10V Low thermal impedance 150 21a 225 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 9.5. Size:315K  analog power
 am20n15-250d.pdf 

Analog Power AM20N15-250D N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 255 @ VGS = 10V 12 Low thermal impedance 150 290 @ VGS = 4.5V 11 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 9.6. Size:334K  analog power
 am20n06-90i.pdf 

Analog Power AM20N06-90I N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 94 @ VGS = 10V 19 Low thermal impedance 60 109 @ VGS = 4.5V 18 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.7. Size:139K  analog power
 am20n06-90d.pdf 

Analog Power AM20N06-90D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 94 @ VGS = 10V 19 circuitry. Typical applications are PWMDC-DC 60 109 @ VGS = 4.5V 18 converters

 9.8. Size:289K  analog power
 am20n10-250d.pdf 

Analog Power AM20N10-250D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 280 @ VGS = 10V 11 Low thermal impedance 100 355 @ VGS = 4.5V 10 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

 9.9. Size:73K  analog power
 am20n10-130d.pdf 

Analog Power AM20N10-130D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17 converters and power management in portable and 100 160 @ VGS = 4.5V 15

 9.10. Size:291K  analog power
 am20n10-180d.pdf 

Analog Power AM20N10-180D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 180 @ VGS = 10V 14 Low thermal impedance 100 190 @ VGS = 4.5V 13 Fast switching speed Typical Applications LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

 9.11. Size:545K  jiaensemi
 jfam20n50d.pdf 

JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.12. Size:833K  jiaensemi
 jfam20n65c.pdf 

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.13. Size:1003K  jiaensemi
 jfam20n60e.pdf 

JFAM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.14. Size:548K  jiaensemi
 jfam20n65e.pdf 

JFAM20N65E 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.15. Size:530K  jiaensemi
 jfam20n60d.pdf 

JFAM20N60D 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.16. Size:845K  jiaensemi
 jfam20n50c.pdf 

JFAM20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.17. Size:541K  jiaensemi
 jfam20n50e.pdf 

JFAM20N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.18. Size:1053K  jiaensemi
 jfam20n60c.pdf 

JFAM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.19. Size:859K  cn vbsemi
 am20n10-250d.pdf 

AM20N10-250D www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI

 9.20. Size:850K  cn vbsemi
 am20n10-130d.pdf 

AM20N10-130D www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI