Справочник MOSFET. AM20P10-250D

 

AM20P10-250D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM20P10-250D
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.295 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

AM20P10-250D Datasheet (PDF)

 ..1. Size:551K  analog power
am20p10-250d.pdfpdf_icon

AM20P10-250D

Analog Power AM20P10-250DP-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 295 @ VGS = -10V 11converters and power management in portable and -100battery-powered prod

 8.1. Size:306K  analog power
am20p15-295d.pdfpdf_icon

AM20P10-250D

Analog Power AM20P15-295DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)295 @ VGS = -10V -10.7 Low thermal impedance -150580 @ VGS = -5.5V -7.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOL

 8.2. Size:300K  analog power
am20p15-160d.pdfpdf_icon

AM20P10-250D

Analog Power AM20P15-160DP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -15 Low thermal impedance -150173 @ VGS = -5.5V -14 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

 9.1. Size:153K  analog power
am20p06-135d.pdfpdf_icon

AM20P10-250D

Analog Power AM20P06-135DP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16converters and power management in portable and -60battery-powered produc

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FCU5N60 | NVMFS5C628N | CS4N80P | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT

 

 
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