Analog Power AM2307PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYrDS(on) (m)VDS (V) ID(A)31 @ VGS = -4.5V -5.2Key Features: 44 @ VGS = -2.5V -4.4 Low r trench technology DS(on)-2056 @ VGS = -1.8V -3.9 Low thermal impedance 83 @ VGS = -1.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Indust

Analog Power AM2308NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA

Analog Power AM2305PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Ci

Analog Power AM2306NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in p

Analog Power AM2300NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.035 @ VGS = 4.5V 4.320power management circuitry. Typical 0.050 @ VGS = 2.5V 3.5applications are DC-DC converters,

Analog Power AM2308NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)60 @ VGS = 4.5V3.8 Low thermal impedance 3082 @ VGS = 2.5V3.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2305PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion C

Analog Power AM2303PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

Analog Power AM2302NEN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical applications are DC-DC converters and 0.076 @ VGS = 4.5V 3.420power management in portable and 0.103 @ VGS = 2.5V 2

Analog Power AM2301PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)130 @ VGS = -4.5V -2.6 Low thermal impedance -20190 @ VGS = -2.5V -2.2 Fast switching speed SOT-23 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE

Analog Power AM2301PEP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.6-20battery-powered product

Analog Power AM2304NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = 10V8.5 Low thermal impedance 3018 @ VGS = 4.5V7.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA =

Analog Power AM2302NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)76 @ VGS = 4.5V3.4 Low thermal impedance 20103 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2306NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5circuitry. Typical applications are PWMDC-DC 30converters, power management in

AiT Semiconductor Inc. AM2304 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2304 is available in a SOT-23 package. 30V/5.1A R = 25m(max.) @ V = 10V DS(ON) GSR = 35m(max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Available in a SOT-23 package. ORDERING INFORMATION APPLICATION Power Management in Notebook Computer, Por

AiT Semiconductor Inc. AM2303 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2303 is the P-Channel logic enhancement -30V/-4.3A, R =50m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.5A, R =58m(typ.)@V =-4.5V DS(ON) GShigh cell density. advanced trench technology to -30V/-2.5A, R =73m(typ.

AiT Semiconductor Inc. AM2301 www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2301 is the P-Channel logic enhancement -20V/-3.2A, R =90m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-2.0A, R =130m(typ.)@V =-2.5VDS(ON) GShigh cell density. Advanced trench technology to Super high density cell de

AiT Semiconductor Inc. AM2305 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2305 is the P-Channel logic enhancement -30V/-4A, R = 55m@V = -10V DS(ON) GS mode power field effect transistor is produced using -30V/-3A, R = 64m@V = -4.5V DS(ON) GShigh cell density. Advanced trench technology to -30V/-2A, R = 85m@V = -2.5V DS(ON)

AiT Semiconductor Inc. AM2306 www.ait-ic.com -30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2306 is the N-Channel logic enhancement -30V/3.6A, R = 45m(typ.)@V = 10V DS(ON) GSmode power field effect transistor is produced using 30V/2.8A, R = 55m(typ.)@V = 4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density cell desi

AiT Semiconductor Inc. AM2308 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2308 is available in a SOT-23 package. 60V/2.7A, R = 104m(max.) @ V = 10V DS(ON) GSR = 130m(max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23 package. ORDERING INFORMATI

AiT Semiconductor Inc. AM2300 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2300 is the N-Channel logic enhancement 20V/4.0A, R =26m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor is produced using 20V/3.0A, R =31m(typ.)@V =2.5V DS(ON) GShigh cell density. Advanced trench technology to 20V/2.0A, R =44m(typ.)@V =1.8

AM2305PEwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

AM2302Nwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver