Справочник MOSFET. AM2320NE

 

AM2320NE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM2320NE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 1337 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: SOT-23
     - подбор MOSFET транзистора по параметрам

 

AM2320NE Datasheet (PDF)

 ..1. Size:312K  analog power
am2320ne.pdfpdf_icon

AM2320NE

Analog Power AM2320NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)18 @ VGS = 4.5V7.0 Low thermal impedance 2021 @ VGS = 2.5V6.5 Fast switching speed SOT-23 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

 9.1. Size:81K  analog power
am2321pe.pdfpdf_icon

AM2320NE

Analog Power AM2321PEP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -4.1-20battery-powered product

 9.2. Size:127K  analog power
am2325p.pdfpdf_icon

AM2320NE

Analog Power AM2325PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) (OHM) ID (A)power loss and heat dissipation. Typical 0.055 @ VGS = -4.5V -3.6applications are DC-DC converters and power management in portable and -200.089 @ VGS = -2.5V

 9.3. Size:133K  analog power
am2328n.pdfpdf_icon

AM2320NE

Analog Power AM2328NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.025 @ VGS = 4.5 V 5.9power management circuitry. Typical 20applications are power switch, power 0.035 @ VGS = 2.5V

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSF2616E | IXTN200N10L2 | TK13A50DA | WMB115N15HG4 | IRFSL4410Z | MTDK3S6R | SSM3K15AMFV

 

 
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