Справочник MOSFET. AM2330NE

 

AM2330NE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM2330NE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для AM2330NE

 

 

AM2330NE Datasheet (PDF)

 ..1. Size:202K  analog power
am2330ne.pdf

AM2330NE
AM2330NE

Analog Power AM2330NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2converters and power management in portable and 30battery-powered products suc

 7.1. Size:93K  analog power
am2330n.pdf

AM2330NE
AM2330NE

Analog Power AM2330NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2converters and power management in portable and 30battery-powered products suc

 9.1. Size:294K  analog power
am2339p.pdf

AM2330NE
AM2330NE

Analog Power AM2339PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -4.5V -3.9 Low thermal impedance -3089 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 9.2. Size:295K  analog power
am2334ne.pdf

AM2330NE
AM2330NE

Analog Power AM2334NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.3. Size:168K  analog power
am2334n.pdf

AM2330NE
AM2330NE

Analog Power AM2334NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products s

 9.4. Size:291K  analog power
am2336n.pdf

AM2330NE
AM2330NE

Analog Power AM2336NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V5.3 Low thermal impedance 3064 @ VGS = 2.5V3.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.5. Size:289K  analog power
am2337p.pdf

AM2330NE
AM2330NE

Analog Power AM2337PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)112 @ VGS = -4.5V -2.8 Low thermal impedance -30172 @ VGS = -2.5V -2.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

 9.6. Size:172K  analog power
am2332n.pdf

AM2330NE
AM2330NE

Analog Power AM2332NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 4.7battery-powered products suc

 9.7. Size:1452K  cn vbsemi
am2336n-t1.pdf

AM2330NE
AM2330NE

AM2336N-T1www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

 9.8. Size:1480K  cn vbsemi
am2339p-t1.pdf

AM2330NE
AM2330NE

AM2339P-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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