Справочник MOSFET. AM2334N

 

AM2334N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM2334N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: SOT-23
     - подбор MOSFET транзистора по параметрам

 

AM2334N Datasheet (PDF)

 ..1. Size:168K  analog power
am2334n.pdfpdf_icon

AM2334N

Analog Power AM2334NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = 4.5V 3.5converters and power management in portable and 30battery-powered products s

 0.1. Size:295K  analog power
am2334ne.pdfpdf_icon

AM2334N

Analog Power AM2334NEN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)60 @ VGS = 4.5V3.5 Low thermal impedance 3082 @ VGS = 2.5V3.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:294K  analog power
am2339p.pdfpdf_icon

AM2334N

Analog Power AM2339PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -4.5V -3.9 Low thermal impedance -3089 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 9.2. Size:202K  analog power
am2330ne.pdfpdf_icon

AM2334N

Analog Power AM2330NEN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 10V 5.2converters and power management in portable and 30battery-powered products suc

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History: IRLD120PBF | IXFN32N80P | WSD3028DN | FCA47N60F | IPN50R650CE | IXTH13N80 | SIA483DJ

 

 
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