AM2392N - параметры транзистора MOSFET, его аналоги, datasheet

AM2392N Datasheet (PDF)

..1. Size:278K analog power
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Analog Power AM2392NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = 10V0.9 Low thermal impedance 1501.4 @ VGS = 5.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

9.1. Size:287K analog power
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Analog Power AM2391PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.2 @ VGS = -10V -0.9 Low thermal impedance -1501.3 @ VGS = -4.5V -0.8 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c

9.2. Size:133K analog power
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Analog Power AM2398NN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.194 @ VGS = 10 V 2.2power management circuitry. Typical 60applications are power switch, power 0.273 @ VGS = 4.5V 1

9.3. Size:289K analog power
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Analog Power AM2394NEN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1200 @ VGS = 10V0.9 Low thermal impedance 1501300 @ VGS = 4.5V0.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA