IRFBC40SPBF - описание и поиск аналогов

 ..1. Size:377K  international rectifier
 irfbc40spbf irfbc40lpbf.pdf 

PD - 95546 IRFBC40S/LPbF Lead-Free 7/22/04 Document Number 91116 www.vishay.com 1 IRFBC40S/LPbF Document Number 91116 www.vishay.com 2 IRFBC40S/LPbF Document Number 91116 www.vishay.com 3 IRFBC40S/LPbF Document Number 91116 www.vishay.com 4 IRFBC40S/LPbF Document Number 91116 www.vishay.com 5 IRFBC40S/LPbF Document Number 91116 www.vishay.com 6 IRFBC40S/LPbF

 ..2. Size:290K  vishay
 irfbc40spbf sihfbc40l sihfbc40s.pdf 

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S) RDS(on) ( )VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S) Qgs (nC) 8.3 Dynamic dV/dt

 6.1. Size:350K  international rectifier
 irfbc40s irfbc40l.pdf 

PD - 91016A IRFBC40S/L HEXFET Power MOSFET Surface Mount (IRFBC40S) D Low-profile through-hole (IRFBC40L) VDSS = 600V Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating RDS(on) = 1.2 150 C Operating Temperature G Fast Switching ID = 6.2A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer with the bes

 6.2. Size:264K  vishay
 irfbc40s sihfbc40s irfbc40l sihfbc40l.pdf 

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S) RDS(on) ( )VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S) Qgs (nC) 8.3 Dynamic dV/dt

 7.1. Size:178K  international rectifier
 irfbc40.pdf 

 7.2. Size:2166K  international rectifier
 irfbc40pbf.pdf 

PD - 94955 IRFBC40PbF Lead-Free 01/29/04 Document Number 91115 www.vishay.com 1 IRFBC40PbF Document Number 91115 www.vishay.com 2 IRFBC40PbF Document Number 91115 www.vishay.com 3 IRFBC40PbF Document Number 91115 www.vishay.com 4 IRFBC40PbF Document Number 91115 www.vishay.com 5 IRFBC40PbF Document Number 91115 www.vishay.com 6 IRFBC40PbF TO-220AB Package O

 7.3. Size:609K  international rectifier
 irfbc40aspbf.pdf 

PD - 95545 IRFBC40ASPbF Lead-Free 7/22/04 Document Number 91113 www.vishay.com 1 IRFBC40ASPbF Document Number 91113 www.vishay.com 2 IRFBC40ASPbF Document Number 91113 www.vishay.com 3 IRFBC40ASPbF Document Number 91113 www.vishay.com 4 IRFBC40ASPbF Document Number 91113 www.vishay.com 5 IRFBC40ASPbF Document Number 91113 www.vishay.com 6 IRFBC40ASPbF Docum

 7.4. Size:200K  international rectifier
 irfbc40a.pdf 

SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 1.2 6.2A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Aval

 7.5. Size:167K  international rectifier
 irfbc40lc.pdf 

 7.6. Size:189K  international rectifier
 irfbc40apbf.pdf 

SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 1.2 6.2A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Aval

 7.7. Size:288K  st
 irfbc40.pdf 

IRFBC40 N - CHANNEL 600V - 1.0 - 6.2 A - TO-220 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRFBC40 600 V

 7.8. Size:361K  vishay
 irfbc40as sihfbc40as.pdf 

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 1.2 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanche

 7.9. Size:209K  vishay
 irfbc40lc sihfbc40lc.pdf 

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Conf

 7.10. Size:387K  vishay
 irfbc40aspbf sihfbc40as.pdf 

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 1.2 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanche

 7.11. Size:1614K  vishay
 irfbc40 sihfbc40.pdf 

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Fast Switching Qg (Max.) (nC) 60 COMPLIANT Ease of Paralleling Qgs (nC) 8.3 Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 7.12. Size:1617K  vishay
 irfbc40pbf sihfbc40.pdf 

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Fast Switching Qg (Max.) (nC) 60 COMPLIANT Ease of Paralleling Qgs (nC) 8.3 Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 7.13. Size:208K  vishay
 irfbc40a sihfbc40a.pdf 

IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 42 COMPLIANT Ruggedness Qgs (nC) 10 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Configurati

 7.14. Size:986K  vishay
 irfbc40lpbf.pdf 

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount (IRFBC40S/SiHFBC40S) VDS (V) 600 Available Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) RDS(on) ( )VGS = 10 V 1.2 RoHS* Available in Tape and Reel (IRFBC20S, COMPLIANT Qg (Max.) (nC) 60 SiHFBC20S) Qgs (nC) 8.3 Dynamic dV/dt Rating Qgd (nC) 30 15

 7.15. Size:210K  vishay
 irfbc40lc irfbc40lcpbf sihfbc40lc.pdf 

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Conf

 7.16. Size:1566K  infineon
 irfbc40 sihfbc40.pdf 

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Fast Switching Qg (Max.) (nC) 60 COMPLIANT Ease of Paralleling Qgs (nC) 8.3 Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 7.17. Size:73K  harris semi
 irfbc40 irfbc42.pdf 

IRFBC40, Semiconductor IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, January 1998 N-Channel Power MOSFETs Features Description 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 1.2 and 1.6 MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown

 7.18. Size:284K  inchange semiconductor
 irfbc40.pdf 

iscN-Channel MOSFET Transistor IRFBC40 FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 7.19. Size:284K  inchange semiconductor
 irfbc40a.pdf 

iscN-Channel MOSFET Transistor IRFBC40A FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 7.20. Size:322K  inchange semiconductor
 irfbc40l.pdf 

iscN-Channel MOSFET Transistor IRFBC40L FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 7.21. Size:278K  inchange semiconductor
 irfbc40as.pdf 

iscN-Channel MOSFET Transistor IRFBC40AS FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN