IRFBE20PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFBE20PBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 54 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 38 nC
trⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6.5 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для IRFBE20PBF
IRFBE20PBF Datasheet (PDF)
irfbe20pbf.pdf
PD - 95630IRFBE20PbF Lead-Free8/4/04Document Number: 91117 www.vishay.com1IRFBE20PbFDocument Number: 91117 www.vishay.com2IRFBE20PbFDocument Number: 91117 www.vishay.com3IRFBE20PbFDocument Number: 91117 www.vishay.com4IRFBE20PbFDocument Number: 91117 www.vishay.com5IRFBE20PbFDocument Number: 91117 www.vishay.com6IRFBE20PbFPeak Diode Recovery
irfbe20pbf sihfbe20.pdf
IRFBE20, SiHFBE20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 6.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbe20pbf.pdf
PD - 95630IRFBE20PbF Lead-Freewww.irf.com 18/4/04IRFBE20PbF2 www.irf.comIRFBE20PbFwww.irf.com 3IRFBE20PbF4 www.irf.comIRFBE20PbFwww.irf.com 5IRFBE20PbF6 www.irf.comIRFBE20PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+- +-
irfbe20 sihfbe20.pdf
IRFBE20, SiHFBE20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 6.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbe30pbf.pdf
PD - 94945IRFBE30PbF Lead-Free1/15/04Document Number: 91118 www.vishay.com1IRFBE30PbFDocument Number: 91118 www.vishay.com2IRFBE30PbFDocument Number: 91118 www.vishay.com3IRFBE30PbFDocument Number: 91118 www.vishay.com4IRFBE30PbFDocument Number: 91118 www.vishay.com5IRFBE30PbFDocument Number: 91118 www.vishay.com6IRFBE30PbFTO-220AB Package Ou
irfbe30spbf irfbe30lpbf.pdf
PD - 95507IRFBE30SPbFIRFBE30LPbFHEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche RatedD Fast SwitchingVDSS = 800V Ease of Paralleling Simple Drive RequirementsRDS(on) = 3.0 Lead-FreeGID = 4.1ASDescriptionThird Generation HEXFETs from InternationalRectifier provide the designer with the bestcombination of fast switching, ruggedized device
irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem
irfbe30 sihfbe30.pdf
IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbe30l irfbe30lpbf irfbe30s irfbe30spbf.pdf
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem
irfbe30 sihfbe30.pdf
IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbe30.pdf
iscN-Channel MOSFET Transistor IRFBE30FEATURESLow drain-source on-resistance:RDS(ON) =3.0 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918