Справочник MOSFET. IRFBE30L

 

IRFBE30L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFBE30L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 310 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для IRFBE30L

 

 

IRFBE30L Datasheet (PDF)

 ..1. Size:589K  international rectifier
 irfbe30spbf irfbe30lpbf.pdf

IRFBE30L IRFBE30L

PD - 95507IRFBE30SPbFIRFBE30LPbFHEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche RatedD Fast SwitchingVDSS = 800V Ease of Paralleling Simple Drive RequirementsRDS(on) = 3.0 Lead-FreeGID = 4.1ASDescriptionThird Generation HEXFETs from InternationalRectifier provide the designer with the bestcombination of fast switching, ruggedized device

 ..2. Size:448K  vishay
 irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf

IRFBE30L IRFBE30L

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

 ..3. Size:471K  vishay
 irfbe30l irfbe30lpbf irfbe30s irfbe30spbf.pdf

IRFBE30L IRFBE30L

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

 7.1. Size:2101K  international rectifier
 irfbe30pbf.pdf

IRFBE30L IRFBE30L

PD - 94945IRFBE30PbF Lead-Free1/15/04Document Number: 91118 www.vishay.com1IRFBE30PbFDocument Number: 91118 www.vishay.com2IRFBE30PbFDocument Number: 91118 www.vishay.com3IRFBE30PbFDocument Number: 91118 www.vishay.com4IRFBE30PbFDocument Number: 91118 www.vishay.com5IRFBE30PbFDocument Number: 91118 www.vishay.com6IRFBE30PbFTO-220AB Package Ou

 7.2. Size:167K  international rectifier
 irfbe30.pdf

IRFBE30L IRFBE30L

 7.3. Size:1517K  vishay
 irfbe30 sihfbe30.pdf

IRFBE30L IRFBE30L

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 7.4. Size:1469K  infineon
 irfbe30 sihfbe30.pdf

IRFBE30L IRFBE30L

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 7.5. Size:284K  inchange semiconductor
 irfbe30.pdf

IRFBE30L IRFBE30L

iscN-Channel MOSFET Transistor IRFBE30FEATURESLow drain-source on-resistance:RDS(ON) =3.0 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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