Справочник MOSFET. IRFBF30S

 

IRFBF30S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFBF30S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 78 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.7 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для IRFBF30S

 

 

IRFBF30S Datasheet (PDF)

 ..1. Size:261K  vishay
 irfbf30s irfbf30spbf.pdf

IRFBF30S IRFBF30S

IRFBF30S, SiHFBF30SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 900DefinitionRDS(on) ()VGS = 10 V 3.7 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 10 Fast SwitchingQgd (nC) 42 Ease of Paralleling Simple Drive RequirementsConfiguration Single Compliant to R

 7.1. Size:241K  international rectifier
 irfbf30pbf.pdf

IRFBF30S IRFBF30S

PD - 95631IRFBF30PbF Lead-Free8/4/04Document Number: 91122 www.vishay.com1IRFBF30PbFDocument Number: 91122 www.vishay.com2IRFBF30PbFDocument Number: 91122 www.vishay.com3IRFBF30PbFDocument Number: 91122 www.vishay.com4IRFBF30PbFDocument Number: 91122 www.vishay.com5IRFBF30PbFDocument Number: 91122 www.vishay.com6IRFBF30PbFPeak Diode Recovery

 7.2. Size:166K  international rectifier
 irfbf30.pdf

IRFBF30S IRFBF30S

 7.3. Size:57K  international rectifier
 irfbf30m.pdf

IRFBF30S IRFBF30S

TranElectric IRFCF30Die for HexfetDie SpecificationGeneral description :Hexfet power MOSFET diewith the following features:* Dynamic dv/dt rating* Ease of paralleing* Repetitve avalanche rated* Fast switchingMechanical Characteristic:Silicon ChipDimension (mm): 4.42*5.32Dimension (mil): 174*206Thickness:Metallization: AlRecommended wire(mm): 0.25 Recommende

 7.4. Size:1073K  vishay
 irfbf30pbf sihfbf30.pdf

IRFBF30S IRFBF30S

IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

 7.5. Size:1070K  vishay
 irfbf30 sihfbf30.pdf

IRFBF30S IRFBF30S

IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

 7.6. Size:285K  inchange semiconductor
 irfbf30.pdf

IRFBF30S IRFBF30S

iscN-Channel MOSFET Transistor IRFBF30FEATURESLow drain-source on-resistance:RDS(ON) =3.7 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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