IRLZ34NS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRLZ34NS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 68 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 25(max) nC
Время нарастания (tr): 100 ns
Выходная емкость (Cd): 220 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.035 Ohm
Тип корпуса: TO263
IRLZ34NS Datasheet (PDF)
irlz34nspbf irlz34nlpbf.pdf
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PD - 95583IRLZ34NSPbFIRLZ34NLPbFl Logic-Level Gate Drive HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRLZ34NS)VDSS = 55Vl Low-profile through-hole (IRLZ34NL)l 175C Operating TemperatureRDS(on) = 0.035l Fast SwitchingGl Fully Avalanche RatedID = 30Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutiliz
irlz34ns irlz34nl.pdf
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PD - 91308AIRLZ34NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ34NS) Low-profile through-hole (IRLZ34NL) 175C Operating TemperatureRDS(on) = 0.035 Fast SwitchingG Fully Avalanche RatedID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques
irlz34n 1.pdf
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Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 30 A
irlz34npbf.pdf
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PD - 94830IRLZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.035l Fully Avalanche RatedGl Lead-FreeID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest
irlz34n.pdf
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PD - 9.1307BIRLZ34NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.035 Fast SwitchingG Fully Avalanche RatedID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan
irlz34n 1.pdf
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Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 30 A
irlz34npbf.pdf
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PD - 94830IRLZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.035l Fully Avalanche RatedGl Lead-FreeID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest
irlz34n.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ34N IIRLZ34NFEATURESStatic drain-source on-resistance:RDS(on) 35mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
Другие MOSFET... IRLZ24N , IRLZ24NL , IRLZ24NS , IRLZ30 , IRLZ34 , IRLZ34A , IRLZ34N , IRLZ34NL , 12N60 , IRLZ40 , IRLZ44 , IRLZ44A , IRLZ44N , IRLZ44NL , IRLZ44NS , ITF86110DK8T , ITF86116SQT .