IRFH7191 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFH7191
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.6 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.6 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 26 nC
Время нарастания (tr): 6.1 ns
Выходная емкость (Cd): 836 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: PQFN5X6
IRFH7191 Datasheet (PDF)
irfh7191.pdf
FastIRFET IRFH7191PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 8.0 m(@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 80 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features
irfh7194.pdf
FastIRFET IRFH7194PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 16.4 m (@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.1 ID 35 A (@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Features Benefits Low RDS(ON) (
irfh7190.pdf
FastIRFET IRFH7190PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 7.5 m(@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 82 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active O-R
irfh7188.pdf
FastIRFET IRFH7188PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 6.0 m(@ VGS = 10V) Qg (typical) 33 nC Rg (typical) 0.92 ID 105 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Feature
irfh7185.pdf
FastIRFET IRFH7185PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 5.2 m(@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 123 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features
irfh7110.pdf
IRFH7110PbFHEXFET Power MOSFETVDS 100 VVgs max 20 VRDS(on) max 13.5 m(@VGS = 10V)58 nCQG (typical)RG (typical) 0.6PQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (
irfh7107.pdf
IRFH7107PbFHEXFET Power MOSFETVDS75 VRDS(on) max 8.5 m(@VGS = 10V)Qg (typical)48nCRG (typical)0.6ID 75 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (
irfh7184.pdf
FastIRFET IRFH7184PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 4.8 m(@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 128 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active
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