IRFH7194
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFH7194
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.6
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.6
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 11
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 13
nC
trⓘ -
Время нарастания: 3.3
ns
Cossⓘ - Выходная емкость: 374
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0164
Ohm
Тип корпуса:
PQFN5X6
Аналог (замена) для IRFH7194
IRFH7194
Datasheet (PDF)
..1. Size:756K international rectifier
irfh7194.pdf 
FastIRFET IRFH7194PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 16.4 m (@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.1 ID 35 A (@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Features Benefits Low RDS(ON) (
7.1. Size:484K international rectifier
irfh7191.pdf 
FastIRFET IRFH7191PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 8.0 m(@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 80 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features
7.2. Size:505K international rectifier
irfh7190.pdf 
FastIRFET IRFH7190PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 7.5 m(@ VGS = 10V) Qg (typical) 26 nC Rg (typical) 1.0 ID 82 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active O-R
8.1. Size:511K international rectifier
irfh7188.pdf 
FastIRFET IRFH7188PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 6.0 m(@ VGS = 10V) Qg (typical) 33 nC Rg (typical) 0.92 ID 105 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Feature
8.2. Size:539K international rectifier
irfh7185.pdf 
FastIRFET IRFH7185PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 5.2 m(@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 123 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Hot Swap and Active O-Ring Features
8.3. Size:234K international rectifier
irfh7110.pdf 
IRFH7110PbFHEXFET Power MOSFETVDS 100 VVgs max 20 VRDS(on) max 13.5 m(@VGS = 10V)58 nCQG (typical)RG (typical) 0.6PQFN 5X6 mmID 50 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (
8.4. Size:267K international rectifier
irfh7107.pdf 
IRFH7107PbFHEXFET Power MOSFETVDS75 VRDS(on) max 8.5 m(@VGS = 10V)Qg (typical)48nCRG (typical)0.6ID 75 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (
8.5. Size:510K international rectifier
irfh7184.pdf 
FastIRFET IRFH7184PbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 4.8 m(@ VGS = 10V) Qg (typical) 36 nC Rg (typical) 1.2 ID 128 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Optimized for Secondary Side Synchronous Rectification Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Hot Swap and Active
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