AM30N02-59D Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AM30N02-59D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 5 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.059 Ohm
Тип корпуса: TO-252
- подбор MOSFET транзистора по параметрам
AM30N02-59D Datasheet (PDF)
am30n02-59d.pdf

Analog Power AM30N02-59DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 4.5V 24circuitry. Typical applications are PWMDC-DC 2088 @ VGS = 2.5V 20converters
am30n02-40d.pdf

Analog Power AM30N02-40DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 29 @ VGS = 4.5V 34circuitry. Typical applications are PWMDC-DC 2043 @ VGS = 2.5V 22converters
am30n03-59d.pdf

Analog Power AM30N03-59DN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 10V 24circuitry. Typical applications are PWMDC-DC 3088 @ VGS = 4.5V 20converters,
am30n06-39ie.pdf

Analog Power AM30N06-39IEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30converters and power management in portable and 6050 @ VGS = 4.5V 26batt
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IXFH40N30 | TF252TH | WSD3066DN | IXFN32N80P | WSD3028DN | AM2334N | IRLD120PBF
History: IXFH40N30 | TF252TH | WSD3066DN | IXFN32N80P | WSD3028DN | AM2334N | IRLD120PBF



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