Справочник MOSFET. AM30N03-59D

 

AM30N03-59D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM30N03-59D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 5 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.059 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

AM30N03-59D Datasheet (PDF)

 ..1. Size:153K  analog power
am30n03-59d.pdfpdf_icon

AM30N03-59D

Analog Power AM30N03-59DN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 10V 24circuitry. Typical applications are PWMDC-DC 3088 @ VGS = 4.5V 20converters,

 6.1. Size:293K  analog power
am30n03-40d.pdfpdf_icon

AM30N03-59D

Analog Power AM30N03-40DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)29 @ VGS = 10V34 Low thermal impedance 3043 @ VGS = 4.5V28 Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 8.1. Size:138K  analog power
am30n02-40d.pdfpdf_icon

AM30N03-59D

Analog Power AM30N02-40DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 29 @ VGS = 4.5V 34circuitry. Typical applications are PWMDC-DC 2043 @ VGS = 2.5V 22converters

 8.2. Size:139K  analog power
am30n02-59d.pdfpdf_icon

AM30N03-59D

Analog Power AM30N02-59DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 4.5V 24circuitry. Typical applications are PWMDC-DC 2088 @ VGS = 2.5V 20converters

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PM506BA | SW4N70B | TPV70R190C | IPA320N20NM3S | IMZA65R048M1H | JFPC20N60C | RJK0631JPR

 

 
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