Справочник MOSFET. AM30N03-59D

 

AM30N03-59D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM30N03-59D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 5 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.059 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для AM30N03-59D

 

 

AM30N03-59D Datasheet (PDF)

 ..1. Size:153K  analog power
am30n03-59d.pdf

AM30N03-59D
AM30N03-59D

Analog Power AM30N03-59DN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 10V 24circuitry. Typical applications are PWMDC-DC 3088 @ VGS = 4.5V 20converters,

 6.1. Size:293K  analog power
am30n03-40d.pdf

AM30N03-59D
AM30N03-59D

Analog Power AM30N03-40DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)29 @ VGS = 10V34 Low thermal impedance 3043 @ VGS = 4.5V28 Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 8.1. Size:138K  analog power
am30n02-40d.pdf

AM30N03-59D
AM30N03-59D

Analog Power AM30N02-40DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 29 @ VGS = 4.5V 34circuitry. Typical applications are PWMDC-DC 2043 @ VGS = 2.5V 22converters

 8.2. Size:139K  analog power
am30n02-59d.pdf

AM30N03-59D
AM30N03-59D

Analog Power AM30N02-59DN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m() ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 59 @ VGS = 4.5V 24circuitry. Typical applications are PWMDC-DC 2088 @ VGS = 2.5V 20converters

 8.3. Size:203K  analog power
am30n06-39ie.pdf

AM30N03-59D
AM30N03-59D

Analog Power AM30N06-39IEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30converters and power management in portable and 6050 @ VGS = 4.5V 26batt

 8.4. Size:294K  analog power
am30n08-80d.pdf

AM30N03-59D
AM30N03-59D

Analog Power AM30N08-80DN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)82 @ VGS = 10V21 Low thermal impedance 80110 @ VGS = 4.5V18 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv

 8.5. Size:291K  analog power
am30n06-65da.pdf

AM30N03-59D
AM30N03-59D

Analog Power AM30N06-65DAN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)65 @ VGS = 10V23 Low thermal impedance 6078 @ VGS = 4.5V21 Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 8.6. Size:175K  analog power
am30n06-39d.pdf

AM30N03-59D
AM30N03-59D

Analog Power AM30N06-39DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30converters and power management in portable and 6050 @ VGS = 4.5V 26batte

 8.7. Size:1346K  cn vbsemi
am30n06-39d.pdf

AM30N03-59D
AM30N03-59D

AM30N06-39Dwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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