AM3406N
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AM3406N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 6.3
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 4.7
nC
trⓘ -
Время нарастания: 5
ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.044
Ohm
Тип корпуса:
TSOP-6
Аналог (замена) для AM3406N
AM3406N
Datasheet (PDF)
..1. Size:136K analog power
am3406n.pdf 
Analog Power AM3406NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.032 @ VGS = 10 V 6.3power management circuitry. Typical 30applications are power switch, power 0.044 @ VGS = 4.5V 5
8.1. Size:403K ait semi
am3406.pdf 
AiT Semiconductor Inc. AM3406 www.ait-ic.com 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3406 is the N-Channel logic enhancement 30V/6.0A, R = 20m(typ.) @V = 10V DS(ON) GS mode power field effect transistor is produced using 30V/4.8A, R = 27m(typ.) @V = 4.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell de
9.1. Size:319K analog power
am3400n.pdf 
Analog Power AM3400NN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)950 @ VGS = 10V1.2 Low thermal impedance 2001100 @ VGS = 5.5V1.1 Fast switching speed Typical Applications: White LED boost converters TSOP-6 Automotive Systems Industrial DC/DC Conversion Circuits ABSOL
9.2. Size:218K analog power
am3405p.pdf 
Analog Power AM3405PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management 56 @ VGS = -4.5V -4.9circuitry. Typical applications are PWMDC-DC converters, power management in po
9.3. Size:507K analog power
am3407pe.pdf 
Analog Power AM3407PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)34 @ VGS = -4.5V -5 Low thermal impedance-2048 @ VGS = -2.5V -3 Fast switching speedTypical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media PlayersDrain: 1,2,5,6
9.4. Size:91K analog power
am3403p.pdf 
Analog Power AM3403PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) (O) ID (A)provide low rDS(on) and to ensure minimal 0.056 @ V = -10V -4.0power loss and heat dissipation. Typical GS-30applications are DC-DC converters and 0.086 @ V = -4.5V -3.4GSpower management in portabl
9.5. Size:237K analog power
am3402n.pdf 
Analog Power AM3402NN-Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.027 @ VGS = 10 V 6.3applications are DC-DC converters and power 300.035 @ VGS = 4.5V 5.5management in portable an
9.6. Size:327K ait semi
am3400.pdf 
AiT Semiconductor Inc. AM3400 www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400 is the N-Channel logic enhancement 30V/5.8A, R =28m(typ.)@V =10V DS(ON) GSmode power field effect transistor is produced using 30V/5.0A, R =30m(typ.)@V =4.5V DS(ON) GShigh cell density. Advanced trench technology to 30V/3.5A, R =40m(typ.)@V =2.
9.7. Size:555K ait semi
am3401.pdf 
AiT Semiconductor Inc. AM3401 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 is the P-Channel logic enhancement -30V/-4.3A, R =47m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.5A, R =55m(typ.)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to -30V/-2.5A, R =70m(typ.
9.8. Size:522K ait semi
am3407.pdf 
AiT Semiconductor Inc. AM3407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3407 is the P-Channel logic enhancement -30V/-4.3A, R =44m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.0A, R =70m(typ.)@V =-4.5V DS(ON) GShigh cell density. Advanced trench technology to Super high density c
9.9. Size:326K ait semi
am3400a.pdf 
AiT Semiconductor Inc. AM3400A www.ait-ic.com MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3400A is the N-Channel logic enhancement 30V/5.8A, R =22m(typ.)@V =10V DS(ON) GSmode power field effect transistor is produced using 30V/5.0A, R =25m(typ.)@V =4.5V DS(ON) GShigh cell density. Advanced trench technology to 30V/3.5A, R =31m(typ.)@V =
9.10. Size:2316K cn vbsemi
am3407pe.pdf 
AM3407PEwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Ch
9.11. Size:868K cn vbsemi
am3401e3vr.pdf 
AM3401E3VRwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-
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