AM3411PE - описание и поиск аналогов

 ..1. Size:73K  analog power
 am3411pe.pdf 

Analog Power AM3411PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7 applications are DC-DC converters and -20 0.057 @ VGS = -2.5V -4.9 power management in portab

 9.1. Size:315K  analog power
 am3413p.pdf 

Analog Power AM3413P P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 2400 @ VGS = -10V -0.74 Low thermal impedance -200 2550 @ VGS = -4.5V -0.72 Fast switching speed TSOP-6 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

 9.2. Size:327K  analog power
 am3412n.pdf 

Analog Power AM3412N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 27 @ VGS = 10V 6.3 Low thermal impedance 30 35 @ VGS = 4.5V 5.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 9.3. Size:585K  ait semi
 am3413.pdf 

AiT Semiconductor Inc. AM3413 www.ait-ic.com MOSFET 20V P-CHANNEL MOSFET DESCRIPTION FEATURES The AM3413 uses advanced trench technology to V = -20V DS provide excellent R , low gate charge and I = -3A (V = -4.5V) DS(ON) D GS operation with gate voltages as low as 1.8V. This R

 9.4. Size:814K  ait semi
 am3415a.pdf 

AM3415A AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM3415A uses advanced trench technology to V = -20V,I =-4A DS D provide excellent R , low gate charge and R

 9.5. Size:483K  ait semi
 am3415.pdf 

AiT Semiconductor Inc. AM3415 www.ait-ic.com SOT-23 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3415 is the P-Channel logic enhancement -20V/-4.0A, R =45m (typ.)@V =-4.5V DS(ON) GS mode power field effect transistor is produced using -20V/-4.0A, R =54m (typ.)@V =-2.5V DS(ON) GS high cell density. Advanced trench technology to provide ex

 9.6. Size:612K  ait semi
 am3416.pdf 

AM3416 AiT Semiconductor Inc. MOSFET www.ait-ic.com N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM3416 is available in a SOT-23 package. 20V/6A , R =26m (Max.) @V =4.5V DS(ON) GS R =37m (Max.) @V =2.5V DS(ON) GS ESD Protected Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)