AM3443C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AM3443C
Маркировка: E6
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.6 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 4.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8.8 nC
Время нарастания (tr): 18 ns
Выходная емкость (Cd): 120 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.048 Ohm
Тип корпуса: SOT-26
AM3443C Datasheet (PDF)
am3443c.pdf
AM3443C AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM3443C is available in a SOT-26 package. -20V/-4.3A, R = 48m(max.) @ V =-4.5V DS(ON) GS R = 68m(max.) @ V =-2.5V DS(ON) GS R = 100m(max.) @ V =-1.8V DS(ON) GS Super High Dense Cell Design Reliable and Rugged ORDERING INFORMATION Lead F
am3443p.pdf
Analog Power AM3443PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m(OHM) ID (A)dissipation. Typical applications are DC-DC 65 @ V = -4.5V -4.5converters and power management in portable and GSbattery-powered products su
am3444n.pdf
Analog Power AM3444NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 10V6.5 Low thermal impedance 4044 @ VGS = 4.5V5.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R
am3445p.pdf
Analog Power AM3445PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal 0.038 @ VGS = -4.5V -5.6power loss and heat dissipation. Typical -200.054 @ VGS = -2.5V -4.8applications are DC-DC converters and power management in portabl
am3447p.pdf
Analog Power AM3447PP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETsutilize a high cell density trench process to VDS (V) rDS(on) ()ID (A)provide low rDS(on) and to ensure minimal 0.070 @ VGS = -10V -4.4power loss and heat dissipation. Typical -40applications are DC-DC converters and 0.090 @ VGS = -4.5V -3.9power management in portable a
am3446n.pdf
Analog Power AM3446NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V6.5 Low thermal impedance 2044 @ VGS = 2.5V5.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am3441p.pdf
Analog Power AM3441PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 90 @ VGS = -4.5V -2.9converters and power management in portable and battery-powered products such
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