AM3457P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AM3457P
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.9 nC
Время нарастания (tr): 11.7 ns
Выходная емкость (Cd): 38 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.054 Ohm
Тип корпуса: TSOP-6
AM3457P Datasheet (PDF)
am3457p.pdf
Analog Power AM3457PP-Channel 30-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)54 @ VGS = -10V -5 Low thermal impedance -3075 @ VGS = -4.5V -4.2 Fast switching speed Typical Applications: TSOP-6 Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Playe
am3457pe.pdf
Analog Power AM3457PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical 0.056 @ VG = -10V -4.0Sapplications are DC-DC converters and -30.00.083 @ VG = -4.5V -3.4power management in port
am3456ne.pdf
Analog Power AM3456NEN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) ()ID (A)power loss and heat dissipation. Typical 0.032 @ VGS = 10 V 5.3applications are DC-DC converters and 30power management in portable and 0.044 @ VGS = 4.5V 4.5
am3458n.pdf
Analog Power AM3458NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.4 Low thermal impedance 60107 @ VGS = 4.5V3.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am3456n.pdf
Analog Power AM3456NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize High Cell Density process. Low rDS(on)assures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.044 @ VGS = 10 V 5.1power management circuitry. Typical 300.064 @ VGS = 4.5V 4.5applications are power switch, power
am3454n.pdf
Analog Power AM3454NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 58 @ VGS = 10V 4.8converters and power management in portable and 30battery-powered products su
am3459p.pdf
Analog Power AM3459PP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) ()ID (A)this device ideal for use in power management 0.310 @ VGS = -10V 2.1circuitry. Typical applications are PWMDC-DC -60converters, power management in
am3455p.pdf
Analog Power AM3455PP-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.112 @ VGS = 10 V 3.4power management circuitry. Typical -30applications are power switch, power 0.172 @ VGS = 4.5V
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
