Справочник MOSFET. ITF86182SK8T

 

ITF86182SK8T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ITF86182SK8T
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 790 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0115 Ohm
   Тип корпуса: SO8

 Аналог (замена) для ITF86182SK8T

 

 

ITF86182SK8T Datasheet (PDF)

 ..1. Size:172K  intersil
 itf86182sk8t.pdf

ITF86182SK8T ITF86182SK8T

ITF86182SK8TData Sheet January 2000 File Number 4797.211A, 30V, 0.0115 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance[ /Title- rDS(ON) = 0.0115, VGS = -10VPackaging(ITF86- rDS(ON) = 0.016, VGS = -4.5VSO8 (JEDEC MS-012AA)182SK - rDS(ON) = 0.0175, VGS = -4V8T) BRANDING DASH Gate to Source Protection Diode/Sub- Simulation M

 8.1. Size:198K  intersil
 itf86116sqt.pdf

ITF86182SK8T ITF86182SK8T

ITF86116SQTData Sheet March 2000 File Number 4808.210A, 30V, 0.012 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VPackaging- rDS(ON) = 0.016, VGS = 4.5VTSSOP8 Gate to Source Protection Diode Simulation Models- Temperature Compensated PSPICE and SABER5 Electrical Models1 - Spice and SABER Thermal Im

 8.2. Size:173K  intersil
 itf86130sk8t.pdf

ITF86182SK8T ITF86182SK8T

ITF86130SK8TTMData Sheet June 2000 File Number 4798.414A, 30V, 0.0078 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.0078, VGS = 10VPackaging- rDS(ON) = 0.010, VGS = 4.5VSO8 (JEDEC MS-012AA)- rDS(ON) = 0.012, VGS = 4.0VBRANDING DASH Gate to Source Protection Diode Simulation Models- Temperature Compensated PSP

 8.3. Size:199K  intersil
 itf86110dk8t.pdf

ITF86182SK8T ITF86182SK8T

ITF86110DK8TData Sheet January 2000 File Number 4807.27.5A, 30V, 0.025 Ohm, Dual N-Channel, FeaturesLogic Level, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.025, VGS = 10VPackaging[ /Title- rDS(ON) = 0.034, VGS = 4.5VSO8 (JEDEC MS-012AA)(HUF7- rDS(ON) = 0.042, VGS = 4.0V6400S Gate to Source Protection DiodeBRANDING DASHK8) Simulation Model

 8.4. Size:173K  intersil
 itf86172sk8t.pdf

ITF86182SK8T ITF86182SK8T

ITF86172SK8TData Sheet January 2000 File Number 4809.110A, 30V, 0.016 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance[ /Title- rDS(ON) = 0.016, VGS = -10VPackaging(HUF7- rDS(ON) = 0.023, VGS = -4.5VSO8 (JEDEC MS-012AA)6400S - rDS(ON) = 0.026, VGS = -4VBRANDING DASH Gate to Source Protection DiodeK8) Simulation Models/Su

 8.5. Size:207K  intersil
 itf86174sqt.pdf

ITF86182SK8T ITF86182SK8T

ITF86174SQTData Sheet March 2000 File Number 4799.39A, 30V, 0.016 Ohm, P-Channel, Logic FeaturesLevel, Power MOSFET Ultra Low On-Resistance- rDS(ON) = 0.016, VGS = -10VPackaging- rDS(ON) = 0.024, VGS = -4.5VTSSOP-8- rDS(ON) = 0.027, VGS = -4V Gate to Source Protection Diode5 Simulation Models1- Temperature Compensated PSPICE and SABER243E

Другие MOSFET... IRLZ44N , IRLZ44NL , IRLZ44NS , ITF86110DK8T , ITF86116SQT , ITF86130SK8T , ITF86172SK8T , ITF86174SQT , RFP50N06 , ITF87008DQT , ITF87012SVT , ITF87052SVT , ITF87056DQT , ITF87068SQT , ITF87072DK8T , 12N65KL-TF , 20N03 .

 

 
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