Справочник MOSFET. AM40P03-20D

 

AM40P03-20D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM40P03-20D
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 41 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 408 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

AM40P03-20D Datasheet (PDF)

 ..1. Size:282K  analog power
am40p03-20d.pdfpdf_icon

AM40P03-20D

Analog Power AM40P03-20DP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 ..2. Size:1449K  cn vbsemi
am40p03-20d.pdfpdf_icon

AM40P03-20D

AM40P03-20Dwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFET

 4.1. Size:308K  analog power
am40p03-20i.pdfpdf_icon

AM40P03-20D

Analog Power AM40P03-20IP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 6.1. Size:85K  analog power
am40p03-34d.pdfpdf_icon

AM40P03-20D

Analog Power AM40P03-34DP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32converters and power management in portable and -30battery-powered produ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSE60R180HT | SIHG47N60S | SM1A24NSK | 9N95 | SI9407BDY | AP1A003GMT-HF | HGI110N08AL

 

 
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