AM40P03-20I. Аналоги и основные параметры

Наименование производителя: AM40P03-20I

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 41 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 408 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm

Тип корпуса: TO-251

Аналог (замена) для AM40P03-20I

- подборⓘ MOSFET транзистора по параметрам

 

AM40P03-20I даташит

 ..1. Size:308K  analog power
am40p03-20i.pdfpdf_icon

AM40P03-20I

Analog Power AM40P03-20I P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 20 @ VGS = -10V -41 Low thermal impedance -30 35 @ VGS = -4.5V -31 Fast switching speed Typical Applications TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 4.1. Size:282K  analog power
am40p03-20d.pdfpdf_icon

AM40P03-20I

Analog Power AM40P03-20D P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 20 @ VGS = -10V -41 Low thermal impedance -30 35 @ VGS = -4.5V -31 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 4.2. Size:1449K  cn vbsemi
am40p03-20d.pdfpdf_icon

AM40P03-20I

AM40P03-20D www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET

 6.1. Size:85K  analog power
am40p03-34d.pdfpdf_icon

AM40P03-20I

Analog Power AM40P03-34D P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32 converters and power management in portable and -30 battery-powered produ

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