AM4392N - параметры транзистора MOSFET, его аналоги, datasheet

AM4392N Datasheet (PDF)

..1. Size:313K analog power
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Analog Power AM4392NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)255 @ VGS = 10V2.9 Low thermal impedance 150290 @ VGS = 5.5V2.7 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

0.1. Size:848K cn vbsemi
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AM4392N-T1www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.260 at VGS = 10 V3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSD Primary Side SwitchSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Chann

9.1. Size:320K analog power
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Analog Power AM4394NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)50 @ VGS = 10V6.5 Low thermal impedance 15060 @ VGS = 5.5V5.9 Fast switching speed SO-8 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

9.2. Size:192K analog power
am4390n.pdf pdf_icon

Analog Power AM4390NN-Channel 150V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.625 @ VGS = 10 V 1.9battery-powered products suc