AM4407PE. Аналоги и основные параметры

Наименование производителя: AM4407PE

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 30 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm

Тип корпуса: SOIC-8

Аналог (замена) для AM4407PE

- подборⓘ MOSFET транзистора по параметрам

 

AM4407PE даташит

 ..1. Size:117K  analog power
am4407pe.pdfpdf_icon

AM4407PE

Analog Power AM4407PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -10V -15 -30 converters and power management in portable and 13 @ VGS = -4.5V -11 ba

 7.1. Size:210K  analog power
am4407p.pdfpdf_icon

AM4407PE

Analog Power AM4407P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( ) ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 9 @ VGS = -10V -15 -30 circuitry. Typical applications are PWMDC-DC 13 @ VGS = -4.5V -11 converter

 8.1. Size:475K  ait semi
am4407.pdfpdf_icon

AM4407PE

AiT Semiconductor Inc. AM4407 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4407 is the P-Channel logic enhancement 30V/-12.0A, R = 12m (typ)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-7.5A, R = 19m (typ)@V =-4.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell des

 9.1. Size:320K  analog power
am4401p.pdfpdf_icon

AM4407PE

Analog Power AM4401P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 160 @ VGS = -10V -3.6 Low thermal impedance -150 170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

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