AM4434N. Аналоги и основные параметры

Наименование производителя: AM4434N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm

Тип корпуса: SOIC-8

Аналог (замена) для AM4434N

- подборⓘ MOSFET транзистора по параметрам

 

AM4434N даташит

 ..1. Size:159K  analog power
am4434n.pdfpdf_icon

AM4434N

Analog Power AM4434N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 6 @ VGS = 4.5V 18.6 30 battery-powered products such

 9.1. Size:392K  analog power
am4437p.pdfpdf_icon

AM4434N

Analog Power AM4437P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 10.5 @ VGS = -10V -14 Low thermal impedance -30 16 @ VGS = -4.5V -11 Fast switching speed Typical Applications SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OT

 9.2. Size:87K  analog power
am4438n.pdfpdf_icon

AM4434N

Analog Power AM4438N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC 32 @ VGS = 4.5V 8.1 converters and power management in portable and 30 battery-powered products su

 9.3. Size:326K  analog power
am4432n.pdfpdf_icon

AM4434N

Analog Power AM4432N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 11 @ VGS = 4.5V 13.8 Low thermal impedance 30 12 @ VGS = 2.5V 13.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Другие IGBT... AM4417P, AM4420, AM4420N, AM4424N, AM4426N, AM4430N, AM4431P, AM4432N, IRFP064N, AM4435, AM4436N, AM4438N, AM4460NT, AM4462N, AM4463P, AM4466N, AM4470N