Справочник MOSFET. AM4435

 

AM4435 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM4435
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 350 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
   Тип корпуса: SOP-8
     - подбор MOSFET транзистора по параметрам

 

AM4435 Datasheet (PDF)

 ..1. Size:327K  ait semi
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AM4435

AiT Semiconductor Inc. AM4435 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement -30V/-8.0A, R =16m(typ)@V =-10V DS(ON) GSmode power field effect transistor is produced -30V/-5.0A, R =26m(typ)@V =-4.5V DS(ON) GSusing high cell density. Advanced trench Super high density cell design for extremel

 9.1. Size:392K  analog power
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AM4435

Analog Power AM4437PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)10.5 @ VGS = -10V -14 Low thermal impedance -3016 @ VGS = -4.5V -11 Fast switching speed Typical Applications: SO-8 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OT

 9.2. Size:159K  analog power
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AM4435

Analog Power AM4434NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 6 @ VGS = 4.5V 18.630battery-powered products such

 9.3. Size:87K  analog power
am4438n.pdfpdf_icon

AM4435

Analog Power AM4438NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 32 @ VGS = 4.5V 8.1converters and power management in portable and 30battery-powered products su

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BRFL24N50 | APT8014JLL | 2SK3572-Z | SI7234DP | IRFP254A | HM4892A | CS740S

 

 
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