AM4540C. Аналоги и основные параметры

Наименование производителя: AM4540C

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.089 Ohm

Тип корпуса: SO-8

Аналог (замена) для AM4540C

- подборⓘ MOSFET транзистора по параметрам

 

AM4540C даташит

 ..1. Size:162K  analog power
 am4540c.pdf pdf_icon

AM4540C

Analog Power AM4540C P & N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 104 @ V = 4.5V 3.7 GS 40 circuitry. Typical applications are PWMDC-DC 89 @ V = 10V 4.0 GS con

 9.1. Size:259K  analog power
 am4542c.pdf pdf_icon

AM4540C

Analog Power AM4542C P & N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 27 @ V = 4.5V 7.3 GS 40 converters and power management in portable and 22 @ V = 10V 8.3 GS

 9.2. Size:401K  analog power
 am4541c.pdf pdf_icon

AM4540C

Analog Power AM4541C PRODUCT SUMMARY N & P-Channel 40-V (D-S) MOSFET rDS(on) (m ) VDS (V) ID (A) 42 @ VGS = 10V 5.8 40 60 @ VGS = 4.5V 4.8 Key Features Key Features 90 @ VGS = -10V -3.9 Low r trench technology Low r trench technology DS(on) DS(on) -40 125 @ VGS = -4.5V -3.4 Low thermal impedance Low thermal impedance Fast switching speed Fas

 9.3. Size:405K  analog power
 am4543c.pdf pdf_icon

AM4540C

Analog Power AM4543C PRODUCT SUMMARY N & P-Channel 40-V (D-S) MOSFET rDS(on) (m ) VDS (V) ID (A) 42 @ VGS = 10V 5.8 40 60 @ VGS = 4.5V 4.8 Key Features Key Features 30 @ VGS = -10V -6.9 Low r trench technology Low r trench technology DS(on) DS(on) -40 40 @ VGS = -4.5V -6.0 Low thermal impedance Low thermal impedance Fast switching speed Fast

ПОКАЗАТЬ ЕЩЁ

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