Справочник MOSFET. AM4835EP

 

AM4835EP Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM4835EP
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
   Тип корпуса: SOIC-8
     - подбор MOSFET транзистора по параметрам

 

AM4835EP Datasheet (PDF)

 ..1. Size:246K  analog power
am4835ep.pdfpdf_icon

AM4835EP

Analog Power AM4835EPP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 19 @ VGS = -10V -9.5-30converters and power management in portable and 30 @ VGS = -4.5V -7.5

 8.1. Size:320K  analog power
am4835p.pdfpdf_icon

AM4835EP

Analog Power AM4835PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)19 @ VGS = -10V -9.5 Low thermal impedance -3030 @ VGS = -4.5V -7.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 8.2. Size:1779K  cn vbsemi
am4835p.pdfpdf_icon

AM4835EP

AM4835Pwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

 9.1. Size:217K  analog power
am4830ns.pdfpdf_icon

AM4835EP

Analog Power AM4830NSN-Channel 30-V (D-S) MOSFET MOSFET PRODUCT SUMMARYVDS (V) rDS(on) m()ID (A)These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13.5 @ VGS = 10V 1330rDS(on) and to ensure minimal power loss and heat 20 @ VGS = 4.5V 11dissipation. Typical applications are DC-DC converters and power management in portable and

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History: KF5N50PZ | VSE002N03MS-G | DMF7N65 | 2SK3430-ZJ | SMC2342A | WMO90P04TS | R6535KNZ1

 

 
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