Справочник MOSFET. AM4919P

 

AM4919P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM4919P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 45 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для AM4919P

 

 

AM4919P Datasheet (PDF)

 ..1. Size:203K  analog power
 am4919p.pdf

AM4919P AM4919P

Analog Power AM4919PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 21 @ VGS = -4.5V 8.2circuitry. Typical applications are PWMDC-DC -2035 @ VGS = -2.5V 6.4converters,

 9.1. Size:312K  analog power
 am4915p.pdf

AM4919P AM4919P

Analog Power AM4915PDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)17.5 @ VGS = -10V -9.0 Low thermal impedance -3023 @ VGS = -4.5V -7.9 Fast switching speed SO-8 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UN

 9.2. Size:191K  analog power
 am4910n.pdf

AM4919P AM4919P

Analog Power AM4910NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC 13.5 @ VGS = 10V 10converters and power management in portable and 30battery-powered produ

 9.3. Size:326K  analog power
 am4917p.pdf

AM4919P AM4919P

Analog Power AM4917PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)17.5 @ VGS = -4.5V -9.0 Low thermal impedance -20 23 @ VGS = -2.5V -7.9 Fast switching speed 48 @ VGS = -1.8V -5.5Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion C

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