Справочник MOSFET. AM4920N

 

AM4920N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM4920N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 56 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
   Тип корпуса: SO-8
     - подбор MOSFET транзистора по параметрам

 

AM4920N Datasheet (PDF)

 ..1. Size:336K  analog power
am4920n.pdfpdf_icon

AM4920N

Analog Power AM4920NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)34 @ VGS = 10V6.5 Low thermal impedance 3041 @ VGS = 4.5V5.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 8.1. Size:620K  ait semi
am4920.pdfpdf_icon

AM4920N

AiT Semiconductor Inc. AM4920 www.ait-ic.com MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4920 is the Dual N-Channel logic 30V / 7.8A, R =16m (typ.)@V =10V DS(ON) GSenhancement mode power field effect transistor is 30V / 5.8A, R =28m (typ.)@V =4.5V DS(ON) GSproduced using high cell density. Advanced trench Super high density cell design f

 9.1. Size:160K  analog power
am4922n.pdfpdf_icon

AM4920N

Analog Power AM4922NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making 22 @ VGS = 4.5V 7.8this device ideal for use in power management 20circuitry. Typical applications are PWMDC-DC 28 @ VGS = 2.5V 7.0converters, p

 9.2. Size:159K  analog power
am4924n.pdfpdf_icon

AM4920N

Analog Power AM4924NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 11 @ VGS = 4.5V 11dissipation. Typical applications are DC-DC 20converters and power management in portable and 14 @ VGS = 2.5V 10battery-p

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ZXMN0545G4 | SE4060 | IPA600N25NM3S

 

 
Back to Top

 


 
.