Справочник MOSFET. AM4929P

 

AM4929P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AM4929P
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: SOIC-8
 

 Аналог (замена) для AM4929P

   - подбор ⓘ MOSFET транзистора по параметрам

 

AM4929P Datasheet (PDF)

 ..1. Size:119K  analog power
am4929p.pdfpdf_icon

AM4929P

Analog Power AM4929PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 52 @ VGS = -4.5V -4.9converters and power management in portable and -2089 @ VGS = -2.5V -4.0

 0.1. Size:851K  cn vbsemi
am4929p-t1.pdfpdf_icon

AM4929P

AM4929P-T1www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V

 9.1. Size:336K  analog power
am4920n.pdfpdf_icon

AM4929P

Analog Power AM4920NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)34 @ VGS = 10V6.5 Low thermal impedance 3041 @ VGS = 4.5V5.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 9.2. Size:160K  analog power
am4922n.pdfpdf_icon

AM4929P

Analog Power AM4922NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making 22 @ VGS = 4.5V 7.8this device ideal for use in power management 20circuitry. Typical applications are PWMDC-DC 28 @ VGS = 2.5V 7.0converters, p

Другие MOSFET... AM4915P , AM4917P , AM4919P , AM4920 , AM4920N , AM4922N , AM4924N , AM4926N , 5N65 , AM4930N , AM4932N , AM4934N , AM4935P , AM4936N , AM4940N , AM4942N , AM4953 .

History: NCE65N460I | TSM2328CX | 2SK765 | VS3614AE | SE2333 | PMN55ENEA | AM3940N

 

 
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