Справочник MOSFET. AM4930N

 

AM4930N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AM4930N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.3 nC
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 62 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для AM4930N

 

 

AM4930N Datasheet (PDF)

 ..1. Size:214K  analog power
 am4930n.pdf

AM4930N AM4930N

Analog Power AM4930NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 58 @ VGS = 4.5V 5.0battery-powered products

 0.1. Size:837K  cn vbsemi
 am4930n-t1.pdf

AM4930N AM4930N

AM4930N-T1www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 9.1. Size:327K  analog power
 am4932n.pdf

AM4930N AM4930N

Analog Power AM4932NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)13.5 @ VGS = 4.5V10 Low thermal impedance 3020 @ VGS = 2.5V8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 9.2. Size:329K  analog power
 am4934n.pdf

AM4930N AM4930N

Analog Power AM4934NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)18 @ VGS = 10V8.9 Low thermal impedance 3026 @ VGS = 4.5V7.4 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 9.3. Size:323K  analog power
 am4935p.pdf

AM4930N AM4930N

Analog Power AM4935PDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)21 @ VGS = -10V -8.2 Low thermal impedance -3035 @ VGS = -4.5V -6.4 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.4. Size:315K  analog power
 am4936n.pdf

AM4930N AM4930N

Analog Power AM4936NDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 10V13 Low thermal impedance 3015 @ VGS = 4.5V10 Fast switching speed SO-8 Typical Applications: DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTH

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