AM4934N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AM4934N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 8.9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 5.3 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 102 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.018 Ohm
Тип корпуса: SO-8
AM4934N Datasheet (PDF)
am4934n.pdf
Analog Power AM4934NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)18 @ VGS = 10V8.9 Low thermal impedance 3026 @ VGS = 4.5V7.4 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R
am4932n.pdf
Analog Power AM4932NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)13.5 @ VGS = 4.5V10 Low thermal impedance 3020 @ VGS = 2.5V8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R
am4935p.pdf
Analog Power AM4935PDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)21 @ VGS = -10V -8.2 Low thermal impedance -3035 @ VGS = -4.5V -6.4 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE
am4936n.pdf
Analog Power AM4936NDual N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)9 @ VGS = 10V13 Low thermal impedance 3015 @ VGS = 4.5V10 Fast switching speed SO-8 Typical Applications: DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTH
am4930n.pdf
Analog Power AM4930NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 58 @ VGS = 4.5V 5.0battery-powered products
am4930n-t1.pdf
AM4930N-T1www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
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